BLW78 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW78
DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB or B operated mobile, industrial and military transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-A) s.s.b. (class-AB) VCE V Ic Iqzs) A 0,05 f MHz 150 PL W 100 35(P.E.P.) 100(P.E.P.) Gp dB > 6 typ. 19,5 typ. 19,0 > 70 typ. 42 djd> dB typ. -40 typ. -30 Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. PIN CONFIGURATION PINNING-SOT121B. Fig.1 Simplified outline. SOT121B. PIN NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quniih/ S«mi-f nnrWtnrc
Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value VCESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (average) IqAV) Collector current (peak value); f> 1 MHz ICM R.F, power dissipation (f > 1 MHz); Tmb = 25 °C Prf Storage temperature Tstg Operating junction temperature Tj max. max. max. max. max. max. 160 V V V A A W -65 to+150 °C max. 200 "C Fig.2 D.C. SOAR. I Continuous d.c operation II Continuous r,f operation III Short-time operation during mismatch 100 Fig.3 R.F. power dissipation; VCE < 28 V; f > 1 MHz. THERMAL RESISTANCE (dissipation = 80 W; Tmb = 86 °C; i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rthj-mb(dc) Rth j-mb(rf) Rth mb-h 1,45 K/W 1,06 K/W 0,2 K/W
Tj = 25 IJC Collector-emitter breakdown voltage VBE = 0; lc = 50 mA Collector-emitter breakdown voltage open base; lc = 100 mA Emitter-base breakdown voltage open collector; IE = 5 mA Collector cut-off current VBE = 0; VCE = 35 V D.C. current gainf) lc = 5 A; VCE = 5 V Collector-emitter saturation voltage IC=15A;IB = 3A Transition frequency atf = 100 MHz'2) -IE = 5 A; VCB = 28 V -IE = 15 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = le = 0; VCB = 28 V Feedback capacitance atf = 1 MHz lc = 100 mA; VCE = 28 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp < 300 us; S < 0,02. 2. Measured under pulse conditions: tp < 50 us; 5 < 0,01. V(BR)CES > 70 V V(BR)CEO > 35 V V(BR)EBO > 4V ICES < 5 mA hFE CEsat 20 to 85 typ. 2 V fT typ. 370 MHz fT typ. 350 MHz Cc typ. 155 pF Cre typ. 102 pF Crf typ. 3 pF
Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D -- t '~ D1 U3 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7,27 617 0.286 0,243 b 582 556 0.229 0.219 c 0.16 0.10 0006 0004 D 1286 12,59 0.506 0.496 12,8; 12,5" o.sof 0495 2,83 2,57 .505 495 F 2.67 2,41 0,105 0.095 H 28,45 25.52 1 120 1.005 L 7.93 6,32 0312 0249 P 3,30 3.05 0130 0.120 Q 445 391 0.175 0154 q 18,4 072 , : 24 90 098 097 6.48 6.22 0255 0245 12.32 1206 0485 |_0.475 051 0.02 1.02 004 45° OUTLINE VERSION SOT121B IEC REFERENCES JEDEC EIAJ EUROPEAN PROJECTION