BLW76 NJSEMI | Alldatasheet
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLW76 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW76 is Designed for use in class-AB orclass-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band. FEATURES: « PG= 18 dB min. at 75 W/30 MHz
- IMD3 = -30 dBc max. at 75 W (PEP)
- Omnigold™ Metalization System MAXIMUM RATINGS Ic VCB VCE PDISS Tj TSTG eJC 10A 60V 35V 140W@TC = 25°C -65 °C to +200 °C -65°Cto+150°C 1.05°C/W PACKAGE STYLE .380 4L FLG ~^- \\ 0,125 NOW ___ ', C , -FUUR DIM A B C D E F G H J MINIMUM .220/559 .785/1994 .970/24,64 004/0 10 .085/2 16 160/4 06 ,240/6 10 MAXIMUM .230/5.84 .980/24.89 385/9 78 .105/2.67 180/4 57 .280/7.11 .255/6.48 CHARACTERISTICS Tc = 25°c SYMBOL BVCEO BVCER BVEBO ICES hFE C0b GPE IMD3 TEST CONDITIONS Ic = 50 mA lc = 50mA RBE = 10O IE = 10mA VE = 28 V VCE = 5.0 V lc = 1 .0 A VCB = 28 V f = 1 -0 MHz VCE = 25 V ICQ = 3.2 A f = 225 MHz PREF = 16W Vision = -8 dB Snd. = -7 dB Side Band = -1 6 dB MINIMUM 4.0 13.5 TYPICAL 14.5 MAXIMUM 5.0 100 -55 UNITS V V V mA ... PF dB dBc NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualitv