BLW60C NJSEMI | Alldatasheet

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£.i±£.ii , Li ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 VHP power transistor BLW60C

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched hFE groups are available on request. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) Vcc V 12,5 12,5 f MHz 175 1 ,6-28 PL W 3-30 (P.E.P.) GL dB > 5,0 typ. 19,5 > 75 typ. 35 Q 1.2+J1.4 ZL Q 2,6-j1,2 dB typ. -33 PIN CONFIGURATION PINNING -SOT120A. Fig.1 Simplified outline. SOT120A. PIN VI Semi-Conductors reserves the right to change lest conditions, parameter limin ;md package dimensions without notice Inlbrmntion liimiiheJ by NJ Semi-Conductors a believed tu he both accurate ami reliable ;it the lime uf guing to press. However \\ Scini-t. (inductors .bstiincs ini responsibility for my errors or omissions discovered in its use NJ Seini-Condtn.t( rs cm:our:iues Mi^ti incrs rn \\ciih ih;it datasheets ;ire Liirrent before p'nciiojr

Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO 'C(AV) 'CM Prf Tstg Ti max. max. max. max. max. max. -65 to + max. 100 150 200 V V V A A W 102 (A) MGP47S s 70 °C X "" s" s k

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Fig.2 D.C. SOAR. 102 150 Prf (W) 100 C I Confirm II Continu IllShort-ti Fig.3 F MCP480 --^ --.

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  • ^, ) 50 Th(.c) 100 ous d.c. operation ous r.f. operation ne operation during mismatch l.F. power dissipation; VCE ^ 16,5 V; f > MHz. THERMAL RESISTANCE (dissipation = 40 W; Tmb = 88 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink th j-mb(dc) (h J-mb(rf) th mb-h 2,8 K/W 2,05 K/W 0,45 K/W

Tj = 25 °C Breakdown voltage Collector-emitter voltage VBE = 0; lc = 50 mA Collector-emitter voltage open base; lc = 100 mA Emitter-base voltage open collector; IE = 25 mA Collector cut-off current VBE = 0;VCE = 15V Transient energy L = 25mH;f = 50Hz open base -VBE = 1,5V;RBE£ = 33Q D.C. current gain <1> lc = 4 A; VCE = 5 V D.C. current gain ratio of matched devices (1) lc = 4 A; VCE = 5 V Collector-emitter saturation voltage <1' lc= 12,5 A; IB = 2,5 A Transition frequency at f = 100 MHz (1> |C = 4A; VCE= 12,5V lc= 12,5 A; VCE = 12,5V Collector capacitance at f = 1 MHz lE = le = 0;VCB=15V Feedback capacitance at f = 1 MHz lc = 200 mA; VCE = 1 5 V Collector-stud capacitance Note 1 . Measured under pulse conditions: tp < 200 [is; 8 < 0,02. V(BR)CES V(BR)CEO V(BR)EBO ICES E E I>E hFEi/hFE2 VCEsat fr fy Cc Cre Ccs > 36 > 16 > 4 < 25 > 8 > 8 typ 50 10 to 80 < 1,2 typ 1,5 typ 650 typ 600 typ 120 < 160 typ 80 typ 2 V V V mA ms ms V MHz MHz PF PF PF PF