BLV99 NJSEMI | Alldatasheet
Document overview
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power transistor BLV99/SL
FEATURES
- Emitter-ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. PINNING-SOT172D PIN CONFIGURATION PIN Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter class-B test circuit. MODE OF OPERATION c.w. narrow band f (MHz) 900 VCE (V) PL (W) GP (dB) Tic (%) >55 NJ Stfmi-C onduclors reserves the right to change lest conditions, parameter limiH ;ind package dimensions without notice Inlbrmation furnished by NJ Semi-C'unducton it believed to he both accurate and reliable ;il the lime of guing to press. However N. I idiiuors .ivuimcs nu responsibility for ;my errors or omissions discovered in its use NJ Senii-Coiiduih r lnxciil\\u tlnlashccls ;ire current before placing unten
In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO Ic ICM Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range junction operating temperature CONDITIONS open emitter open base open collector DC value peak value f>1 MHz f > 1 MHz; Tmb = 50 °C MIN. -65 MAX. 3.5 200 600 150 200 UNIT V V V mA mA W CHARACTERISTICS T; = 25 °C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE ESBR Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain second breakdown energy collector capacitance feedback capacitance CONDITIONS open emitter; lc = 5 mA VBE = 0; lc= 10mA open collector; IE = 0.5mA VBE = 0; VCE = 27 V VCE = 20 V; lc = 150mA L = 25mH; RBE = 10ii; f = 50 Hz VCB = 24 V; IE = I, = 0; f=1 MHz VCE = 24 V; lc = 0; f= 1 MHz MIN. 3.5 0.5 TYP. 1.3 MAX. UNIT V V V mA mJ pF pF