BLV99 ELEFLOW | Alldatasheet
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Technical content
www.eleflow.com U H F p o w e r t r a n s i s t o r B L V 9 9 Description: NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band. All leads are isolated from the mounting base. Features: ∗ Emitter-ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. Data: Drawings: