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NPN Epitaxial Planar Silicon Transistor Application： High frequency power amplifier High Gain ：Gp≥12dB @Vcc=12V. f=27MHz Po=4W Package：TO-220AB Absolute Maximum Ratings at Ta = 25°C Item Symbol Ratings Unit Collector-to-Base Voltage VCBO 80 V Collector-to-Emitter Voltage VCEO 35 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 3 A Collector Current (Pulse) ICP 5 A
1.2 W PC
Junction Temperature Tj 150 °C Storage Temperature Tstg -55---125 °C Electrical Characteristics at Ta = 25°C Ratings Item Symbol Test conditions Min Typ Max Unit Collector to base voltage V(BR)CBO IC=100 μA, IB=0 80 V Collector to emitter voltage V(BR)CEO IC=1mA, IB=0 35 V Collector cutoff current ICBO VCB=40V, IE=0 10 μA Emitter cutoff current IEBO VEB=4V, IC=0 10 μA Collector to emitter saturation voltage VCE(sat) IC=1A, IB=0.1A 0.16 0.6 V DC current transfer ratio hFE VCE=5V, IC=0.5A 40 200 * Gain bandwidth product fT VCE=10V, IC=0.1A 150 MHz Output capacitance Cob VCB=10V, f=1MHz 45 60 pF Output power Po 4.0 W Power efficiency VCC=12V, f=27MHz, Pi=0.2W 60 % The 2SC2078 are classified by hFE as follows : C: 40 to 80 D: 80 to120 E: 100 to 200