BLV97CE NJSEMI | Alldatasheet
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power transistor BLV97CE
FEATURES
- Internal input matching to achieve high power gain
- Ballasting resistors for an optimum temperature profile « Gold metallization ensures excellent reliability
DESCRIPTION
NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for the 960 MHz communications band. The transistor has a 6-lead flange envelope, with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA RF performance up to Th = 25 °C in a common emitter class-AB circuit MODE OF OPERATION c.w. class-AB f(MHz) 960 VCE(V) PL(W) GP (dB) > 7 lie (%) > 50 PINNING-SOT171A PIN SYMBOL e e b c e e n^in o ouu 1 3 5 O Top view Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safely precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCBO VCEO VEBO Ic I CM Plot Tstg PARAMETER collector base voltage collector emitter voltage emitter base voltage collector current collector current total power dissipation storage temperature operating junction temperature CONDITIONS open emitter open base open collector DC or average peak value f>1 MHz f>1 MHz Tmb = 25 JC MIN. -65 MAX. i 50 3.5 150 200 UNIT V V V A A W C THERMAL RESISTANCE SYMBOL Rthj-mb Rth mb-h PARAMETER from junction to mounting base (RF) from mounting base to heatsink CONDITIONS TYP. MAX. 2.3 0.4 UNIT K/W K/W 10 r (A) 10- -h4- = 70°C\\mb = 25 "C 102 Fig.2 DC SOAR. Fig.3 Power/ternperature derating; I: DC or RF operation; II: short-term operation during mismatch.
at TJ = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES HFE Cc Cre Cof PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance at f = 1 MHz feedback capacitance atf = 1 MHz collector-flange capacitance CONDITIONS open emitter lc = 50 mA open base lc= 100mA open collector IE = 10mA VBE = 0 VCE = 27 V lc = 2A VCE = 20 V lE = le = 0 VCB = 25 V lc = 0 VCE = 25 V MIN. 3.5 TYP. MAX. UNIT V V V mA PF PF PF 100 hFE C Fig.4 MDA443 VCE = 25 V 20V . > ^-* ) 2 4 6 8 lcC\\ DC current gain as a function of collector current; typical values. 20 30 VCB (V) Fig.5 Output capacitance as a function of collector-base voltage; typical values.
Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D -- 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) OUTLINE VERSION SOT171A ISSUE DATE 97-06-28