BLV861 NJSEMI | Alldatasheet

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, O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear push-pull power transistor BLV861

FEATURES

  • Double stage internal input and output matching networks for an optimum wideband capability and high gain
  • Polysilicon emitter ballasting resistors for an optimum temperature profile
  • Gold metallization ensures excellent reliability.

APPLICATIONS

  • Common emitter class-AB output stages of television transmitter amplifiers (sound and vision) operating in bands 4 and 5 (470 to 860 MHz).

DESCRIPTION

NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap. PINNING PIN SYMBOL e collector 1; note 1 collector 2; note 1 base 1 base 2 common emitters; note 2 Notes 1. Collectors c1 and c2 are internally connected. 2. Common emitters are connected to the flange. 1nn ±y b2

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Fig.1 Simplified outline (SOT289A) and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-AB f (MHz) 860 VCE (V) PL (W) 100 GP (dB) >8.5 Tic (%) >55 AGp (dB) N.) Semi-Conductors reserves the right in change test conditions, parameter limin and package dimensions xvithoiif notice Information furrmhei) by NJ Semi-CumJucton it believed to be both accurate nml reliable .it the lime of guing to press. However \\ Semi -I oiiJutlurs .bsiimcs no responsibility Cor ;my errors itr oinis.simis Jiscovured in its use \\ Seini-C iitidiiitiir* cncourases unrciner; to\\uiil\\< datasheets :ire i tirrent before plncinai Tilers

UHF linear push-pull power transistor BLV861 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO Ic Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature CONDITIONS open emitter open base open collector Tmb = 25 °C MIN. -65 MAX. 220 +150 200 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rfh j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 220 W; note 1 VALUE 0.8 0.2 UNIT K/W K/W Note 1. Thermal resistance is determined under specified RF operating conditions. 102 ic (A) Total dev (1) Tmb (2) Th = MGK766 x\\, X - - f21\\) s 10 vCE(V) ice; both sections equally loaded. = 25 °C. 70 °C. Fig.2 DC SOAR. 102

UHF linear push-pull power transistor BLV861 CHARACTERISTICS Values apply to either transistor section; Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE AhFE Cc PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain DC current gain ratio of both sections collector capacitance CONDITIONS IE = 0; IG = 35 mA IB = 0; Ic = 90 mA IE = 2 mA; lc = 0 VCB = 28 V lc = 2.8A;VCE = 10V |C = 4.5A;VCE = 10V IE = ie= 0; VCE = 28 V; f = 1 MHz; note 1 MIN. 0.67 TYP. MAX. 120 1.5 UNIT V V V mA PF Note 1. The value of Cc is that of the die only; it is not measurable because of the internal matching network.

APPLICATION INFORMATION

RF performance at Th = 25 °C in a common emitter push-pull class-AB test circuit. MODE OF OPERATION CW class-AB f (MHz) 860 VCE (V) ICQ (A) 0.1 PL (W) 100 GP (dB) >8.5 TIC (%) >55 AGP (dB) Ruggedness in class-AB operation The BLV861 is capable of withstanding a load mismatch corresponding to VSWR = 3:1 through all phases under the conditions: Th = 25 °C; f = 860 MHz; VCE = 28 V; ICQ = 0.1 A; PL = 100 W; R,h mb.h = 0.2 K/W.

t A - D »• I 1 1 F 5 t E 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.65 3.92 0.183 0.154 b 3.33 3.07 0.131 0.121 c 0.10 0.05 0.004 0.002 D 13.10 12.90 0.516 0.508 E 11.53 11.33 0.454 0.446 e 4.60 0.181 F 1.65 1.40 0.065 0.055 H 19.81 19.05 0.780 0.750 Hi 4.85 4.34 0.191 0.171 P 3.43 3.17 0.135 0.125 Q 2.31 2.06 0.091 0.081 q 21.44 0.844 28.07 27.81 1.105 1.095 11.81 11.56 0.465 0.455 0.51 0.02 1.02 0.04 0.25 0.01 OUTLINE VERSION SOT289A REFERENCES IEC JEDEC ElAJ