BLV859 NJSEMI | Alldatasheet
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear push-pull power transistor BLV859
FEATURES
- Double internal input and output matching for an optimum wideband capability and high gain
- Polysilicon emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability. APPLICATION
- Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band.
DESCRIPTION
NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a P0 sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V. PINNING SOT262B PIN SYMBOL e Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Tt, = 25 °C in a common emitter push-pull test circuit. MODE OF OPERATION CW class-A f (MHz) 860 VCE (V) 'CQ (A) 2 x 2.25 PO sync (W) >20<1> GP (dB) >100) Note 1. Three-tone test signal (-8, -16 and -10 dB); dim = -54 dB. N.I .Semi-Coiiduetors reserves the right to change test conditions, parameter limits and package dimensions without notice Information furnished by NJ Scmi-t on JuctoM ii believed to he holh uccurale ami reliable ill the lime of going to press. However \\ Semi •(.'«iiJuthirs .bsiuins nu responsibility for ;my errors nr omissions discovered in its use NJ Semi-t.iiitdijt.il >rs on . n-.t< HUTS to vcrifv ih.n dntashcets nre current before placinis .irden
UHF linear push-pull power transistor BLV859 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO Ic lc(AV) Plot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature CONDITIONS open emitter open base open collector Tmb = 70 °C; note 1 MIN. -65 MAX. 2.5 145 +150 200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL R(h j-mb Rfh mb-h PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink CONDITIONS P,ot = 145 W; Tmb = 70 °C note 1 note 1 VALUE 0.9 0.15 UNIT K/W K/W UHF linear push-pull power transistor BLV859 CHARACTERISTICS Values apply to either transistor section; j = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO hr-E Co Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current collector-emitter leakage current DC current gain collector capacitance feedback capacitance CONDITIONS lc = 30 mA; IE = 0 lc = 60 mA; IB = 0 IE = 1 .2 mA; lc = 0 VCB = 27 V; VBE = 0 VCE = 20 V VCE = 25 V; lc = 2.25 A VCB = 25 V; IE = ie = 0; f=1 MHz VCE = 25V; lB = 0;f=1 MHz MIN. 2.5 TYP. 36<1> MAX. 140 UNIT V V V mA mA PF PF
- + '•>*•' I ?2n T 1 1 t 5.4 T may ! 1 1.65 ^ — seatina Diane 34.3 max Dimensions in mm. Recommended screw: cheese-head 4-40 UNC/2A. Heatsink compound must be applied sparingly and evenly distributed.