BLV80-28 NJSEMI | Alldatasheet
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLV80-28 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The BLV80-28 is Designed for 28 Volt Class C VHP Power AmplifierApplications up to 175 MHz. FEATURES:
- He = 65 % min. at 80 W/175 MHz
- PG = 6.5 dB min. at 80 W/175 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS Ic VCBO VCEO PDISS L TSTG 9JC 9.0 A 65V 35V 1 1 7 W @ Tc = 25 °C -65 °C to +200 °C -65°Cto+150°C 1.5°C/W PACKAGE STYLE .500 4L FLG C E E f u M J K MINIHUM Inches/nn S£0.-5,l!5 :25/ 780/ly, = B 1D5/3.1 970/34,64 ,195/,e,57 toa^o.ai, ,090/S,2? ,60/4,06 £30/5.84 3,1 B .730/13.54 B -QRQ^.99 OC7/0.18 .I10/E.79 ,1 /i/4.43 S80/7.U 1050/£&,6/ CHARACTERISTICS Tc = 25°c SYMBOL BVceo BVCEO BVEBO ICBO hFE COB PG Tic TEST CONDITIONS lc = 20 mA lc = 200 mA IE = 10mA VCB = 30 V VCE = 25 V lc = 3.5 A VCB = 30 V f = 1 .0 MHz VCC = 25V POUT = 80 W f= 175 MHz MINIMUM 4.0 6.5 TYPICAL 7.0 MAXIMUM 1.5 100 150 UNITS V V V mA PF dB NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Ounlih/