BLV62 NJSEMI | Alldatasheet

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, D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear push-pull power transistor BLV62

FEATURES

  • Internal matching for an optimum wideband capability and high gain
  • Poly-silicon emitter-ballasting resistors for an optimum temperature profile
  • Gold metallization ensures excellent reliability.

DESCRIPTION

Two npn silicon planar epitaxial sections in push-pull structure, intended for use in linear television transmitters (vision or sound). The device is encapsulated in a 4-lead SQT262A2 flange envelope with 2 ceramic caps. The common emitter is connected to the flange. PINNING - SOT262A2 PIN RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w. class-AB f (MHz) 860 VCE (V) PL (W) 150 OP (dB) > 8.5 typ. 9.5 (%) > 45 typ. 50 AGp (dB) (note 1) < 1 typ. 0.5 Note 1. Assuming a 3rd order amplitude transfer characteristic, 1 dB gain compression corresponds with 30% sync input/25% sync output compression in television service (negative modulation, CCIR system). PIN CONFIGURATION /"I 3 4 Top view Fig.1 Simplified outline and symbol. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

UHF linear push-pull power transistor BLV62 LIMITING VALUES (per transistor section unless otherwise specified) In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO , VCEO VSBO 'c> 'c(AV) PM Tag PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range junction operating temperature CONDITIONS open emitter open base open collector DC or average value DC operation; Trt = 25 °C (note 1) MIN. -65 MAX. 12.5 320 150 200 UNIT V V V A rw Note 1. Total device, both sections equally loaded. IG (A) Total de\\ Tr 70 1 V mb VCE (V) /ice, both sections equally loaded. Fig.2 DC SOAR. 100 p 350 Mot (W)300 250 200 150 100 C Total dev (I) Contir (II) Conti (lll)Shor MA3W X X r S. I i i i ;=», L^> -», "v. 20 40 60 80 100 120 Th <°C) nee, both sections equally loaded. iuous DC operation, nuous RF operation. t time operation during mismatch. 3 Power/temperature derating curve.

UHF linear push-pull power transistor BLV62 THERMAL RESISTANCE SYMBOL fV i-mb(DC] "lh j-mb(RF) R(h mb-h PARAMETER from junction to mounting base from junction to mounting base from mounting base to heatsink CONDITIONS PW = 320 W; T^-25-C (note 1) Pw = 350 W; Trt = 25=C (note 1) (note 1) MAX. 0.55 0.5 0.15 UNFT K/W KM K/W Note 1. Total device, both sections equally loaded. CHARACTERISTICS Values apply to either transistor section; Tj = 25 °C. SYMBOL VIBRICBO V<BR)CEO V(BR)6BO ICES AhFE Cc cc., PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain DC current gain ratio of both sections collector capacitance collector-flange capacitance CONDITIONS open emitter; I0 = 60 mA open base; lc m 150 mA open collector; le = 3 mA VM = 0; VCE = 28 V VCE = 25V; lc = 4.5 A VCE = 25V; lc = 4.5 A VCB = 28 V; IE-I.-0; f = 1 MHz f • 1 MHz MIN. 0.67 TYP. 5,7 MAX. 1.5 UNIT V V V mA PF PF

UHF linear push-pull power transistor BLV62 too "FE VCE = 25 Fig.4 Mnc7j9 _>— — - — - — _- — — * — - — _ "• 6 ,c(mA) « DC current gain as a function of collector current, typical values. (A) 0.1 UG1 c VCE = 25 1 Fig ba MRA318 F-.-: 'h /0 t L.,.1 ~y ^ . .41.. ji

  • • — i
  • rr- "^^^
  • --^-^ r/is-c ^*" 0.5 1 1,5 2 2.5 VBE(V)

6 Collector current as a function of

se-emitter voltage, typical values. 350 , T = i, = 0;f = 1 MHz. Fig.5 Collector capacitance as a function of collector-base voltage, typical values.