BLV59 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
, (J nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear power transistor BLV59
FEATURES
« Internal input matching to achieve an optimum wideband capability and high power gain
- Emitter-ballasting resistors for lower junction temperatures
- Titanium-platinum-gold metallization ensures long life and excellent reliability.
APPLICATIONS
- UHF linear amplifiers in television transmitters.
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated in a 6-lead SOT171A flange package with a ceramic cap. All leads are isolated from the flange. PINNING-SOT171A PIN SYMBOL e e b c e e O 1 3 5 Top view Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter class-AB circuit. MODE OF OPERATION CW, class-AB f (MHz) 860 VCE (V) PL (W) Gp (dB) Tic (%) >50 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
UHF linear power transistor BLV59 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO Ic IC(AV) I CM Plot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current peak collector current total power dissipation storage temperature operating junction temperature CONDITIONS open emitter open base open collector f>1 MHz Tmb = 25°C;f>1 MHz MIN. -65 MAX. 3.5 +150 200 UNIT V V V A A A W ac VCE M Fig.2 DC SOAR. 100 200 (1) Continuous operation (f> 1 MHz). (2) Short-time operation during mismatch (f > 1 MHz). Fig.3 Power/temperature derating curves.
UHF linear power transistor BLV59 THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 "C, Ptrt = 50 W VALUE 2.3 0.4 UNIT K/W KM/ CHARACTERISTICS Ti = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES E(SBR) hFE Cc Cre Cor PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current second breakdown energy DC current gain collector capacitance feedback capacitance collector-flange capacitance CONDITIONS open emitter; lc = 50 mA open base; lc = 100 mA open collector; IE = 10 rnA VCE = 27 V; VBE = 0 L = 25 mH; f = 50 Hz; RBE = 1 0 Q. VCE = 24 V; lc = 2 A VCB = 25V; lE = ie = 0;f = 1 MHz VCE = 25V; lc = 0;f= 1 MHz MIN. 3.5 I"- TYP. MAX. UNIT V V V mA mJ pF PF PF 100 nFE Ti = 25 °C. Fig.4 DC current gain as a function of collector current; typical values. 20 30 VCB (v' lE = i,, = 0;f = 1 MHz Fig.5 Collector capacitance as a function of collector-base voltage; typical values
UHF linear power transistor BLV59 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A E, - 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) b UNIT inches 6.81 607 0.268 0.239 2.15 1,85 0,085 0.073 3,20 2,89 0126 0.114 c 0.16 0.07 0.006 0003 D 925 904 0.364 0356 930 899 0.366 0.354 0234 0.226 2490 24.63 0.980 0.970 6,00 5.70 0.236 0224 V 102 OQ U n ,ft ° 26 U'U1