BLV58 NJSEMI | Alldatasheet
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Technical content
£3£tni-L.onauct oi s., Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF linear push-pull power transistor BLV58
FEATURES
- High power gain
- Double stage internal input matching for high input impedance
- Diffused emitter-ballasting resistors enhances ruggedness
- Gold metallization for high reliability.
DESCRIPTION
The BLV58 is a common emitter epitaxial npn silicon planar transistor designed for high linearity class-A operation in UHF (bands 4 and 5) TV transmitters and transposers. The device is incorporated in a push-pull SOT289 flange envelope with a ceramic cap, which is utilized with the emitters connected to the flange. PINNING-SOT289 QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w. class-A 'vision (MHz) 860 VCE (V) ICQ (A) 2x1.6 "o sync (W) GP (dB) >10 dim (dB) (notet) <-45 Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB); zero dB corresponds to peak sync level. PIN CONFIGURATION PIN 'nn: Top view Fig.1 Simplified outline and symbol. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
UHF linear push-pull power transistor BLV58 LIMITING VALUES (per transistor section unless otherwise specified) In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO Id !c(AV) ICM Plot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range junction operating temperature CONDITIONS open emitter open base open collector DC or average value peak value; f>1 MHz DC operation; Tmb = 70 °C (note 1) MIN. -65 MAX. 3.5 150 200 UNIT V V V A A W Note 1. Total device, both sections equally loaded. 10 vCE(V) ffl Total device, both sections equally loaded. Fig.2 DC SOAR. 200 (I) Continuous DC operation (II) Short time operation during mismatch Total device, both sections equally loaded, Fig.3 Power derating curve.
UHF linear push-pull power transistor BLV58 THERMAL RESISTANCE SYMBOL Rthj-mb(DC) Rth mb-h PARAMETER from junction to mounting base from mounting base to heatsink CONDITIONS Pdis = 87 W; Tmb = 70 °C (note 1 ) note 1 MAX. 1.5 0.2 UNIT KM/ KM/ Note 1. Total device, both sections equally loaded. CHARACTERISTICS Values apply to either transistor section; T; = 25 "C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Co PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain collector capacitance CONDITIONS open emitter; lc = 20 mA open base; lc = 50 mA open collector; IE = 10mA VBE = 0; VCE = 27 V VCE = 25 V; IC=1-6A VCB = 25 V; lE = le = 0; f = 1 MHz MIN. 3.5 TYP. MAX. UNIT V V V mA PF
UHF linear push-pull power transistor BLV58 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT289A t A j - -- D - »- . 1. _ t L 1 F Ul [51 H U2 . \\ -«-Ww3(M>l Q -• 10mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 4.65 392 0183 b 333 3.07 0.131 c 0,10 005 0004 D 13.10 12.90 0.516 E 11.53 11.33 0454 e 4.60 0181 F 1.65 1 40 0.065 0055 19.81 19,05 0780 0750 4.85 434 0191 0.171 P 3.43 3.17 0.135 0125 Q 231 2,06 0.091 0081 q 21,44 0844 28.07 27.81 1.105 1.095 11.81 11.56 0.465 0455 051 002 102 004 025 001 UTLINE ERSION REFERENCES IEC JEDEC EIAJ EUROPE PROJEC1 SOT289A ISSUE DATE 97-06-28