BLV32F NJSEMI | Alldatasheet
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Technical content
, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES:
- Diffused emitter ballasting resistors
- PG= 16dBat10W/224MHz
- Omnigold™ Metalization System MAXIMUM RATINGS Ic VCBO VCEO VCES VEBO PDISS Tj TSTG eJC 4.0 A 60V 32V 60V 4.0V
82 W@TC = 25°C
-65 °C to +200 °C -65°Cto+150°C 2.1 °C/W PACKAGE STYLE .500 6L FLG TF: L ™ MAXIMUM lbO/4,06 1= Collector 2= Base 3 and 4= Emitter CHARACTERISTICS Tc-25°c SYMBOL BVCEO BVCES BVEBO ICES hFE Cc PG TEST CONDITIONS lc= 100mA lc= 15mA IE = 10mA VCE = 32 V VCE = 25 V lc = 1 .6 A VCB = 25 V f = 1 .0 MHz VCE = 25 V POUT = 1 0 W f = 224 MHz MINIMUM 4.0 TYPICAL MAXIMUM 5.0 120 UNITS V V V mA ... PF dB NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors