BLV2N60 ESTEK | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

  • 1 - Total 6 Pages
  • Avalanche Energy Specified BV DSS 600V
  • Fast Switching R DS(ON) 4.4ΩΩ ΩΩ
  • Simple Drive Requirements I D

Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply Absolute Maximum Ratings T C =25 o C unless otherwise noted ) Symbol Parameter Value Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage + 20 V Continuous Drain Current 2 A I D Continuous Drain Current ( T C =100 o C ) 1.26 A I DM Drain Current (pulsed) (Note 1) 8 A Power Dissipation 42 W P D Linear Derating Factor 0.33 W/ E AS Single Pulsed Avalanche Energy (Note 2) 55 mJ I AR Avalanche Current (Note 1) 2 A E AR Repetitive Avalanche Energy (Note 1) 4.2 mJ Tj Operating Junction Temperature Range -55 to +1 50 o C T SDG Storage Temperature Range -55 to +150 o C Thermal Characteristics Symbol Parameter Value Units R th j-c Thermal Resistance, Junction to Case Max. 3 / W R th j-a Thermal Resistance, Junction to Ambient Max. 110 / W BLV 2N60 N-channel Enhancement Mode Power MOSFET

  • 2 - Total 6 Pages

Electrical Characteristics

T C =25C unless otherwise noted ) Symbol Parameter Test Conditions Min. Typ. Max. Units BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250uA 600 V ΔBV DSS /ΔT J Breakdown Voltage Temperature Coefficient Reference to I D =1mA 0.6 R DS(ON) Static Drain-Source On-Resistance V GS =10V, I D =1A 4.4 Ω V GS(th) Gate Threshold Voltage V DS GS I D =250uA V g fs Forward Transconductance (note3) V DS =15V, I D =1A 1.5 S I DSS Drain-Source Leakage Current V DS =600V, V GS =0V uA Drain-Source Leakage Current Tc=125 V DS =480V V GS =0V 100 uA I GSS Gate-Source Leakage Current V GS 20V ±100 nA Q g Total Gate Charge nC Q gs Gate-Source Charge nC Q gd Gate-Drain Charge V DD =480V I D =2A V GS =10V (note3) 4.7 nC t (on) Turn-on Delay Time ns t r Turn-on Rise Time ns t (off) Turn-off Delay Time ns t f Turn-off Fall Time V DD =300V I D =2A R G =25Ω note3 (note3) ns C iss Input Capacitance 358 pF C oss Output Capacitance pF C rss Reverse Transfer Capacitance V DS =25V V GS =0V f = 1MHz 9.2 pF Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units I S Continuous Source Diode Forward Current A I SM Pulsed Source Diode Forward Current (note1) A V SD Forward On Voltage V GS =0V, I S =2A 1.4 V t r r Reverse Recovery Time - 340 - ns Q r r Reverse Recovery Charge V GS =0V, I S =2A(note3) dI F /dt =100A/us - 1 - uC Note： (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) L=25mH, Ias=2A，Vdd=50V ，Rg=25 Ω ，staring Tj=25C (3) Pulse width ≤ 300 us; duty cycle ≤ 2% 2N60 N-channel Enhancement Mode Power MOSFET BLV

  • 3 - Total 6 Pages Typical Characteristics Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVdss vs. Junction Temperature Fig 4. Normalized On-Resistance vs. Junction Temperature N-channel Enhancement Mode Power MOSFET 2N60 BLV
  • 4 - Total 6 Pages Typical Characteristics Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig 7. Gate Charge Characteristics Fig 8. Capacitance Characteristics N-channel Enhancement Mode Power MOSFET 2N60 BLV
  • 5 - Total 6 Pages Typical Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Transient Thermal Response Curve N-channel Enhancement Mode Power MOSFET 2N60 BLV
  • 6 - Total 6 Pages Test Circuit and Waveform Fig 12. Gate Charge Waveform Fig 11. Gate Charge Circuit Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Unclamped Inductive Switching Test Circuit Fig 16. Unclamped Inductive Switching Waveforms N-channel Enhancement Mode Power MOSFET 2N60 BLV