BLV25 NJSEMI | Alldatasheet

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Jbemi-donducto'i ^Products., Line.

20 STERN AVE

SPRINGFIELD, NEW JERSEY 07081 U.S.A. BLV25 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLV25 is a 28 V silicon NPN power transistor designed primarily for VHP FM broadcast transmitters. FEATURES:

  • 28 V operation
  • PG = 1.0 dB at 175 W/108 MHz
  • Omnigold™ Metalization System
  • Diffused Ballast Resistors MAXIMUM RATINGS Ic VCESM VCEO VEBo PDISS L TSTG 0jc 17.5A 65V 33V 4.0V

220 W @ Tc = 25 °C

-65 °C to +200 °C -65°Cto+150°C 0.80 °C/W PACKAGE STYLE .500 6L FLG DIM A B C D E L. F u H I J K L M N rci r* J 2"l .Lt o <$ f-l -j -]i B-J U 1 — 725/18 G rr^_F I 01 r... —| H I —I J MINIMUM 150/3.43 V i -•i | ,— 2x 0N y l/x - FULL R .•' '•'•t-' ]'!> -J-E 42 -i i >'M ' rfTi * ) ; — -~ ,\\ L ' MAXIMUM 045 /1.14 210 IS. 33 835 /21 .21 200/5 08 .490 /12 45 003 /0.08 .220/559 .865/21.97 .510/12.95 ~~| 125/3.13 .725/18.42 .970/24.64 .090/2.29 150/3.81 980/24.89 ! .105/2.67 I .170/4.32 ,285/724 ' .120/3.05 .135/3.43 1 = COLLECTOR 2&4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICES hFE VcEsat Cc PG TIC TEST CONDITIONS Ic = 50 mA Ic = 200 mA IE = 20 mA VCE = 33 V VCE = 25 V lc = 8.5 A IC = 20A IC = 4.0A VCB = 25 V f = 1 .0 MHz VCC = 28V POUT = 175 W f= 108 MHz MINIMUM 4.0 TYPICAL 1.6 275 MAXIMUM 100 UNITS V V V mA ... V PF dB NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify rhat datasheets are current before placing orders. Oualifv