BLV20 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
<£s.m.i-(2onau,ctoi \\Pioaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP power transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV20
DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. PINNING-SOT123 PIN R.F performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit MODE OF OPERATION c.w. VCE V f MHz 175 PL W Gp dB >12 > 65 Q 1,8+ JO, 7 YL mS 18-J20 PIN CONFIGURATION Fig.1 Simplified outline and symbol. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Storage temperature Operating junction temperature VCESM VCEO VEBO 'C(AV) 'CM Prf Tstg 65 V 36 V 4 V 0,9 A 2,5 A 20 W -65 to+ 150 "C max. 200 C max. max. max. max. max. max. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qunlih/
VCE,V» Fig.2 D.C. SOAR. 100 I Continuous d.c, operation II Continuous r.f operation III Short-time operation during mismatch Fig.3 R.F. power dissipation; VCE < 28 V; f > 1 MHz. THERMAL RESISTANCE (dissipation = 8 W; Tmb = 72,4 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink CHARACTERISTICS Tj = 25 "C Collector-emitter breakdown voltage VBE = 0; lc = 2 mA Collector-emitter breakdown voltage open base; lc = 10 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE = 36 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE= 10 Q D.C. current gain <1) lc = 0,4 A; VCE = 5 V Collector-emitter saturation voltage f) lc= 1,25 A; IB = 0,25 A Transition frequency atf = 100 MHz <1> -IE = 0,4 A; VCB = 28 V -IE = 1,25 A; VCB = 28 V Collector capacitance atf = 1 MHz IE = le = 0; VCB = 28 V Feedback capacitance at f = 1 MHz lc = 50 mA; VCE = 28 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp < 200 (is; 5 < 0,02. fh j-mb(dc) Rthj-mb(rf) Rth mb-h 10,7 K/W 8,6 K/W 0,3 K/W V(BR)CES V(BR)CEO V(BR)EBO 'CES ESBO ESBR > 65 V > 36 V > 4V < 1 mA > 0,5 mJ > 0,5 mJ typ. 50 10 to 100 VCE. fr fT Ore Cof isat typ. 0,8 V typ. 600 MHz typ. 520 MHz typ. 10 pF typ 7,1 pF typ 2 pF
Flanged ceramic package; 2 mounting holes; 4 leads SOT123A D —i 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) b : 5,82 556 : 0 229 0219 c 0,18 0,10 0,007 0,004 D 9.73 947 0383 0.373 9.63 942 0.397 0.371 F 2,72 231 0107 0091 H 2071 1993 0.815 0785 L 5.61 516 0.221 0203 p Q 3.33 3.04 0 131 0.120 463 4 11 0182 0162 q 1842 0.725 "1 U2 2515 661 24 38 ^ 6 09 0,99 '• 0,26 0,96 ; 0,24 9.78 9.39 0.385 0.370 0.51 0,02 W2 n 1,02 i 45° 0,04 OUTLINE VERSION SOT123A REFERENCES IEC JEDEC EIAJ