BLV101A NJSEMI | Alldatasheet
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Technical content
, O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power transistors BLV101A/BLV101B
FEATURES
« High input and output impedances promote easy matching
- Implanted ballast resistors for optimum temperature profile
- Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistors intended for common emitter, class-AB operation in base station transmitters in the frequency range 850 to 960 MHz, Both transistors have a SOT273 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. PINNING - SOT273 PIN RF performance at Tn = 25 °C in a common emitter test circuit. Mode of operation: c.w, class-AB. TYPE BLV101A BLV101B f (MHz) 900 960 960 900 vce (V) PL (W) QP (dB) > 8.5 typ. 9.8 > 7.5 typ. 8.1 (%) > 48 typ. 45 > 46 typ. 57 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user, it must never be thrown out with the general or domestic waste. PIN CONFIGURATION Top view Flg.1 Simplified outline and symbol. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use, NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
In accordance with the Absolute Maximum System (I EC 134). SYMBOL VCBO VCEO VEBO IG Taa PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range operating junction temperature CONDITIONS open emitter open base open collector DC or average value T^aS'C; f > 1 MHz MIN. -65 MAX. 3.5 100 150 200 UNIT V V V A W 100 (A) 0.1 mb= V X we °rn
10 VCE (V,
Fig.2 DC SOAR. 0052 100 120 Plot (W) (1) DC ope (2) Continu (3) Short tir (f > 1 MHz) Fi£ HCA964 X V N X N s s X s Sj X vs ^(3) ^(2) 40 80 120 160 Th (°C) ration, ous RF operation (f > 1 MHz), ne operation during mismatch (.3 Power/temperature derating. THERMAL RESISTANCE The following values apply to both transistors. P^ (DC) = 100 W; Tmb = 25 "C. SYMBOL "«lh j-mb r«lh mb-h PARAMETER from junction to mounting base (DC) from mounting base to heatsink THERMAL RESISTANCE 1.75K/W
0.3 K/W
The following values apply to both transistors, Tj = 25 °C. SYMBOL "IBRICBO "(BR)Ceo V(BH)EBO ICES nre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain output capacitance (note 1 ) CONDfTIONS Open emitter; lc - 75 mA open base; I0= 150mA open collector; IE= 15mA VK = 0; VOE = 27V VCE = 20 V; IC = 3A VCB = 26V; IE = I.-0; f = 1 MHz MIN. 3.5 TYP. MAX. UNIT V V V mA PF Note 1. The value of C^ is that of the die only; it is not measurable, because of the internal matching network. 100 VE Fig.4 D MCDOS3 VCF -26V S -~^dl r -20V "N, 4 8 12 'c (A) C current gain as a function of collector current; typical values.
APPLICATION INFORMATION
RF psrformance in a common emitter test circuit; Th = = 0.3 K/W; mode of operation: c.w. class-AB. TYPE BLV101A BLV101B f (MHz) 900 900 960 900 960 900 960 VCE (V) 'qzs) (mA) 200 200 200 200 200 200 200 PL (W) GP (dB) > 8.5 typ. 9.5 typ. 8.3 typ. 9.8 typ. 9.3 > 7.5 typ. 8.4 typ. 8.1 typ. 8.2 (%) > 48 typ. 53 typ. 50 typ. 45 typ. 55 > 46 typ. 51 typ. 57 typ. 51 Ruggedness in class-B operation The BLVIOiAand 101 Bare capable of withstanding a load mismatch corresponding to VSWR = 5:1 through all phases under the following conditions: VCE = 26 V, f = 900 MHz (BLV101A), f = 960 MHz (BLV101B), at PL = 50 W. To guarantee the ratio -~ > 0, a 50% input overdrive is permitted for a load power £ 50 W. Fig.5 Overdrive conditions.