BLV10 NJSEMI | Alldatasheet
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u <££tni-dona\\j.ctoi ZPioaucti, Line. tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 VHP power transistor BLV10
DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneautralized common-emitter class-B circuit MODE OF OPERATION C.W. c.w. VCE V 13,5 12,5 f MHz 175 175 PL W GP dB > 9,0 typ. 10,5 n > 70 typ. 75 Zj n 2,8+j1,2 YL mS 76 j16 PIN CONFIGURATION PINNING Fig.1 Simplified outline, SOT123. PIN NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NI Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Qualitv
Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE - 0) peak value VCESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (average) IC(AV) Collector current (peak value); f > 1 MHz ICM R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Pit Storage temperature Tstg Operating junction temperature T, 36 V 18 V 4 V 1,5 A 4,0 A 20 W -65 to + 150 'C max. 200 C max. max. max. max. max. max. 1.75 (A) 1.5 1.25 075 C MGP248 \\ 70 "C^ \\mb-25°C X — i =]— 10 15 20 VCE 'v> Fig.2 D.C. SOAR. I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.3 R.F. power dissipation; VcE^16,5V;f> 1 MHz. 100
(dissipation = 8 W; Tmb = 72,4 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) r^th mb-h 10,7 K/W 8,6 K/W 0,3 K/W CHARACTERISTICS Collector-emitter breakdown voltage VBE = 0; lc = 5 mA Collector-emitter breakdown voltage open base; lc = 25 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0;VcE=18V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 1011 D.C. current gain'1) lc = 0,75 A; VCE = 5 V Collector-emitter saturation voltage'1) IC = 2A;IB = 0,4A Transition frequency at f = 100 MHz'1) -IE = 0,75 A; VCB = 13,5V -IE = 2 A; VCB = 13,5V Collector capacitance at f = 1 MHz IE = le = 0; VCB = 13,5V Feedback capacitance at f = 1 MHz lc = 100 mA; VCE = 13,5V Collector-flange capacitance Note 1 Measured under pulse conditions: tp < 200 (is; 8 < 0,02. V(BR) CES V(BR) CEO V(BR)EBO ICES ESBO ESBR HFE VcEsat fr fr > 36 V > 18 V > 4V < 2 mA > 0,5 mJ > 0,5 mJ typ. 40 1 0 to 1 00 typ. 0,85 V typ. 950 MHz typ. 850 MHz Cof typ. 16,5 pF typ. 12 pF typ. 2 pF
t A -, [ 3 - J i ' F i -*Mi] h. k cm I-.Q »! 5 10mm i scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 747 637 0294 0251 b 5,82 5,56 0.229 0219 c 018 0.10 0.007 0.004 D 9,73 947 0.383 0.373 963 942 0397 0,371 F 272 231 0.107 0091 H 2071 1993 0815 0,785 L 561 516 0221 0203 P 333 304 0,131 0.120 Q 463 4.11 0.182 0162 q 18.42 0725 "1 "2 25,15 ; 661 2438 j 6,09 0.99 j 0,26 0.96 024 978 939 0385 0370 051 002 1 02 004 a OUTLINE VERSION SOT123A IEC REFER JEDEC ENCES EIAJ EUROPEAN PROJECTION C30