BLU99 NJSEMI | Alldatasheet
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Technical content
i, O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power transistor BLU99 BLU99/SL
DESCRIPTION
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.
FEATURES
» multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile;
- gold metallization ensures excellent reliability. The BLU99 has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. The BLU99/SL is a studless version (SOT122D). QUICK REFERENCE DATA R.F. performance at Th = 25 °C in a common-emitter class-B circuit. MODE OF OPERATION narrow band; c.w. VCE V 12,5 12,5 f MHz 470 900 PL W Gp dB > 10,5 typ. 7,0 ilc > 60 typ. 60 PIN CONFIGURATION TOP View MBK187 Fig.1 Simplified outline. SOT122A (BLU99). Fig.2 Simplified outline. SOT122D (BLU99/SL). PINNING - SOT122A; SOT122D PIN
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Limiting values in accordance with the Absolute Maximum System (EC 134) Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c, or average peak value; f > 1 MHz D.C, power dissipation up to Tmt> = 50 ;C R.F. power dissipation f>1 MHz;Tmb = 25 'C Storage temperature Operating junction temperature max. 36 V max. 16 V max. 3 V lcllc(AV) I CM Plot (d.c.) Ptot(r.f) Tstg max. max. max. max. -65 to max. 0,8 2,5 12,5 + 150 200 A A W W te (A) Rth mb-h MDA372 Th = 70 ' \\\\b = 50° i 10 102 VCE <v> = 0,6 K/W Fig.3 D.C. SOAR. THERMAL RESISTANCE (dissipation = 9 W; Tmb = 25 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Ptot (W) C I Contin II Contim IllShort-t Fic UDA373 II s s X X X V X *»„ X
- ^, X --, -», *^,
- ^-~, ^~- 20 40 60 80 100 Th ("C) ousd.c, operation ous r.f. operation (f > 1 MHz), me r.f operation during mismatch (f > 1 MHz). 3.4 Power/temperature derating curves. th j-mb(dc) Rthj-mb(rf) Rth mb-h
10 K/W
7,5 K/W 0,6 K/W
Tj = 25 "C unless otherwise specified Collector-base breakdown voltage open emitter; Ic = 10 mA Collector-emitter breakdown voltage open base; lc = 20 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0;VCE=16V Second breakdown energy; 1 = 25 mH; f = 50 Hz RBE= 10 n D.C. current gain'2' |C = 0,6A; VCE=10V Transition frequency at f = 500 MHz<1) IC = 0,6A;VCE= 12,5V Collector capacitance at f = 1 MHz IE = le = 0;VCB= 12,5V Feedback capacitance at f = 1 MHz IC = 0;VCE = 12,5V Collector-stud capacitance Notes 1. Measured under pulse conditions: tp = 50 us; 8 < 0,01. 2. Measured under pulse conditions: tp = 300 us; 5 < 0,01. V(BR)CBO V(BR)CEO V(BR)EBO ICES ESBR hFE typ. 100 V V V mA mJ typ. typ. 4,0 GHz 7,5 pF typ. 5 pF typ. 1,2 pF