BLU60 NJSEMI | Alldatasheet

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i, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power transistor BLU60/12

DESCRIPTION

N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band.

FEATURES

  • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
  • internal matching to achieve an optimum wideband capability and high power gain.
  • gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. VCE V 12,5 f MHz 470 PL W GP dB > 4,4 '1C > 55 PIN CONFIGURATION PINNING Fig.1 Simplified outline, SOT119A. PIN

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conduetors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value VCBOM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current d.c. or average Ic (peak value); f> 1 MHz ICM Total power dissipation atTmb = 25JC;f> 1 MHz Ptot Storage temperature Tstg Operating junction temperature Tj max. max. max. max max. 36 V 16,5 V 4 V 12 A 36 A max. 110 W -65 to + 150 >C max. 200 "C 200 Prf (W) 150 100

0 I J----L —

Th (°C) Continuous operation (f > 1 MHz) Short-time operation during mismatch (f > 1 MHz) Fig.2 Power/temperature derating curves. MAXIMUM THERMAL RESISTANCE Dissipation = 72 W; Tamb = 25 "C From junction to mounting base (r.f. operation) From mounting base to heatsink Rthj-mb Rth mb-h max. max. 1,4 K/W 0,2 K/W

TJ = 25 'C unless otherwise specified Collector-base breakdown voltage open emitter; IQ = 100 mA Collector-emitter breakdown voltage open base; Ic = 200 mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE= 16V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Q. D.C. current gain VCE = 10V; IC = 8A Collector capacitance at f = 1 MHz !E = ie = 0; VCB= 12,5V Feedback capacitance at f = 1 MHz IC = 0;VCE=12,5 Collector-flange capacitance Fig. 3 D.C. current gain versus collector current; = 25 °C. V(BR)CBO min- 36 V V(BR)CEO min. 16,5 V V(BR)EBO rnin. 4V max. 44 mA ICES =SBR IFE mm. min. typ. 15 mJ typ. 170 pF typ. 100 pF typ. 3 pF 400 (PF) 300 200 100 t Fig.4 ^-^> 1 .

  • ^-»— u DA33? 54 8 12 16 20 VCB (V) Output capacitance versus VCB; IE = ie = 0; f= 1 MHz.

Flanged ceramic package; 2 mounting holes; 6 leads SOT119A 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) mm A 739 632 0291 0.249 b 5.59 533 0.220 0210 534 508 0.210 0.200 407 381 3.160 ),150 c 018 0.07 0.007 0.003 D 12.86 12,59 0,505 0.496 12.83 12.57 0505 0495 e 6.48 0255 F 2,54 2.28 0.100 0090 H 2210 21.08 0.870 0,830 18,55 18,28 0730 0720 P 3.31 297 0130 0117 Q 4.5 3.9 0.1E 0.15 u'//3 6.48 607 0.255 0,239 12.76 1206 0.502 0,475 0.51 002 1.02 004 0.26 001 OUTLINE VERSION SOT119A REFERENCES IEC JEDEC EIA, ISSUE DATE 97-06-28