BLU45 NJSEMI | Alldatasheet
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Technical content
Features
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
- internal matching to achieve an optimum wideband capability and high power gain.
- gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to " mode of operation narrow band; c.w. rn = 25 °C In a c VCE V 12,5 ommon-emitter f MHz 470 class-B circuit PL w GP dB >4,a >55 MECHANICAL DATA SOT-119 (see Fig. 1). Dimensions in mm 2 2 max 12,96 3,35 3,04 (2x) 2,5 t
- «— 12,2 *- li ~"~ I 4,50 4,05 7,5 max t m ..S — 0,14 ceramic I max I \\ metal min, 0,6 Mm (6 kg.cm) max. 0,75 Mm (7,5 kg.cm) Recommended screw: cheese-head 4-40 UNC/2A Torque on screw: Heatsink compound must be applied and evenly distributed. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Operating junction temperature RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134} Collector-base voltage (open emitter) peak value VCBOM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current d.c. or average Ic (peak value);f> 1 MHz ICM Total power dissipation at Tmb - 25 °C; f > 1 MHz Ptot 'stg max. max. max. max. max. 36 V 16,5 V 4 V 9 A 27 A max. 87 W -65to+ 150 °C max. 200 °C (w) ,__ Fig. 2 Power/temperature derating curves. I Continuous operation (f> 1 MHz). II Short-time operation during mismatch (1> 1 MHz). MAXIMUM THERMAL RESISTANCE Dissipation = 54 W; Tamb = 25 °C From junction to mounting base (r.f. operation) From mounting base to heatsink Rthj-mb Rth mb-h max. 1,7 K/W 0,2 K/W
TJ = 25 °C unless otherwise specified- Collector-base breakdown voltage open emitter; l£ = 100 mAL Collector-emitter breakdown voltage open base; IQ = 2QO mA Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current Second breakdown energy L - 25 riiH; f = 50. Hz; RBE = 10 n D.C. current gain Collector capacitance at f » 1 MHz IE = ie = 0;VCB = 12,5V Feedback capacitance at f = 1 MHz Collector-flange capaci.tance V(BR)CBO min- 36 v V(BR)CEO min- 16,5 V. V(BR)EBO mm. 4 V ICES max- 44 mA ESBR "FE Ccf min. 15 mJ mm. typ. typ. 170 pF typ. 100 pF typ. 3 pF 100 Fig. 3 D.C. current gain versus collector current; TJ = 25 °C."' 400 7Z93CIO 0 ' ID VCB (V) ZO Fig. 4 Output capacitance versus