BLU30 NJSEMI | Alldatasheet

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, U 'nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power transistor BLU30/12

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. FEATURES:

  • multi-base structure and emitter-ballasting resistors for an optimum temperature profile
  • gold metallization ensures excellent reliability
  • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA Envelope Mode of operation Collector-emitter voltage (d.c.) Frequency Load power Power gain Collector efficiency Heatsink temperature SOT-1 19 class-B; c.w. VCE f PL GP > T!C > Th 12,5 V

470 MHz

6,0 dB 55 % 25 °C PIN CONFIGURATION PINNING Fig.1 Simplified outline, SOT119A. PIN VI Semi-C (inductors reserves the right to change lest conditions, parameter limin ;ind package dimensions without notice Information lunmntd by NJ Stmi-Conductort is believed to be both accurate ami reliable it the lime of going to press. However \\ Scmi-C oudutiors .b.sumcs no responsibility for ;my errors i>r omissions discovered in its use NJ Seiiu-Coiiduihire eneounaes '.ii-irmicrs tntciifv ih;ii Jnlashctts :irccurrent hefcrc placing .Tilers

Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation f> 1 MHz; Tmb = 25 °C Storage temperature Operating junction temperature VCBOM VCEO VEBO Ic ICM Pto. (r.f.) Tstg Ti max. max. max. max. max. max. -65 max. 16,5 to +150 200 V V V A A W (A) MDA324 T h s s , \\ \\\\t , = 2 10 1Q2 VCE (v) Fig.2 D.C. SOAR. Rth mb_h = 0,2 K/W 100 Plot (W) c I Cent II Short F MDA32S X X X X V X I

  • >v_ X
  • v^ "->>. 40 80 120 160 Th ("C) nuous operation (f > 1 MHz) -time operation during mismatch; (f > 1 MHz. g.3 Power/temperature derating curves THERMAL RESISTANCE (dissipation = 45 W; Tmb = 25 °C) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rthj-mb(r.f.) max. 2,45 KM Rthmb-n max. 0,2 K/W

Tj = 25 °C unless otherwise specified Collector-base breakdown voltage IG = 50 mA; open emitter Collector-emitter breakdown voltage IG = 100 mA; open base Emitter-base breakdown voltage IE = 10 mA; open collector Collector cut-off current VBE = 0;VCE=16V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 S'J D.C. current gain I -4A-V C - , CE ~ Collector capacitance at f = 1 MHz'1' IE = ie = 0;VCB = 12,5V Feed-back capacitance at f = 1 MHz'1' |C = 0;VCE= 12,5V Collector-flange capacitance V(BR)CBO > 36 V(BR)CEO > 16,5 V(BR)EBO > 4 ICES < 22 ESBR > 8 > 15 FE typ. 60 Cc typ. 85 Cre typ. 52 Ccf typ. 3 V V V mA mJ pF pF pF Note 1. Device mounted in SOT-119 envelope without inputmatching. hFE MDA326 X vc X <trj*' ;E = I 2.5V 10V \\ 4 8 12 16 IC<A> Fig.4 TJ = 25 °C; typ. values. 250 cc (pF) 210 170 130 F MDA327 - -.

  • — — ) 4 8 12 16 20 VCB (V) ig.5 IE = ie = 0; f = 1 MHz; typ. values.

— D scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.39 6.32 0.291 0.249 b 5.59 5.33 0.220 0.210 5.34 508 0.210 0.200 4.07 3.81 0.160 0.150 c 0.18 0.07 0.007 0.003 D 12.86 12.59 0.50S 0.496 12.83 12.57 0.505 0.495 e 6.48 0.255 F 2.54 2.28 0.100 0.090 H 22,10 21.08 0.870 0.830 HI 1855 18.28 0.730 0.720 P 331 2.97 0.130 0,117 Q 4.58 3.98 0.180 0.157 q 18.42 0.725 U-I 25.23 23.95 0.993 0.943 6.48 6.07 0.255 0.239 12.76 1206 0.502 0.475 051 002 1.02 0.04 0.26 0.01 OUTLINE VERSION SOT119A REFERENCES IEC JEDEC EIAJ