BLU15 NJSEMI | Alldatasheet
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Technical content
tSe.mi-Conaucto'i LPi , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power transistor BLU15/12
FEATURES
- internal input matching, to achieve wide bandwidth
- Ballasting resistors for optimum temperature profile
- Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated In a SOT122 envelope and intended for common emitter, class-B operation in mobile radio transmitters in the 450 MHz communications band. The transistor has a 4-lead stud envelope with a ceramic cap. All leads are isolated from the flange. PINNING • SOT122A QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w. class-B f (MHz) 470 (V) 12.5 PL (W) GP (dB) > 7.8 (%) > 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PIN CONFIGURATION PIN Fig.1 Simplified outline and symbol. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveYed in its use. NI Semi-Conductors encourages customers to verify rhat datasheets are current before placing orders.
In accordance with the Absolute Maximum System (IEC 134). SYMBOL Vcao VCEO VEBO 'c> 'ciAVI IOM P,o. T*a PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range operating junction temperature CONDITIONS open emitter open base open collector rDC or average value peak value f>1MHz Tni, = 25°C MIN. -65 MAX. 3.5 g 150 200 UNIT V V V A A W W UCC006 rh .70° \\mb C\\ ! Fig.2 DC SOAR, 100 Ptot (W) to (1)Cont (2) Cont (3) Shor MCC007 N X S X x X X X X X X X X
- v, V X 50 100 150 Th (°C) nuous operation, nuous operation (f > 1 MHz), t time operation during mismatch. Fig.3 Power/temperature derating. THERMAL RESISTANCE SYMBOL ^Ihi-mb R(h nth PARAMETER from junction to mounting base from mounting base to heatsink MAX. 0,6 UNIT K/W K/W
T, = 25 ~-C. SYMBOL V,3,c,r. V'=B,CEO Vi5 = ;55G 'CSS h,E cc cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain collector capacitance feedback capacitance collector-stud capacitance CONDITIONS open emitter; I0 = 25 mA open base; l= = 50 mA open collector; IE = 5 mA VB= = 0; VCE=16V VCE=10V; IC = 2A VCB= 12.5V; le-l.-0; f = 1 MHz Vc- = 12.5V; lc-0; f = 1 MHz MIN. 3.5 TYP. 1.2 MAX. UNIT V V V mA PF pF PF Fig.4 DC current gain as a function of co.'lector current, typical values. (pF) V <«^ i 0 4 -—, "— ^ 8 12 16 Fig.5 Collector capacitance as a function of collector-base voltage, typical values.