BLU10 NJSEMI | Alldatasheet
Document overview
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Technical content
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power transistor BLU10/12
FEATURES
- Emitter-ballasting 'esistors for opt'T'Um temperature profile
- Gold metallization ensures excellent reliability
- Withstands full load mismatch.
DESCRIPTION
NPN si;tcon planar epitaxial transisto- encapsu'a'ec in a 4-pin SOT122 envelope. It is designed for common emitter, c!ass-B operation in rrobile radio transmitters in the 470 MHz eorrmunications band. The transistor has a 4-lead 5tud envelope with a ceramic cap. A!i leads are isolated from the stud. PINNING - SOT122A PIN 3 | base emitter QUICK REFERENCE DATA RF performance at T^ = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w. class-B f (MHz) 470 VCE (V) 12.5 PL (W) GP (dB) > 8 lie (%) > 65 PIN CONFIGURATION Rg.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BsO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discoveYed in its use. NI Semi-Conductors encourages customers to verify that datasheets are current before pricing orders.
In accordance with the Absolute Maximum System (I EC 134). SYMBOL VCBO VCEO VEBO 'c> 'c<AV) ICM Ti PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation storage temperature range operating junction temperature CONDITIONS open emitter open base open collector DC or average value peak value f > 1 MHz
- U = 25°C MIN. -65 MAX. 1.6 4.8 150 200 UNIT V V V A A W (A) 0.1 HSA2W 70°^ rn b-' D 10 100 VCE <v) Flg.2 DC SOAR. P1ot (W) C (1 ) Contin (2) Contin (3) Short t (f > 1 Mh F ME AS IS (3) ^U^l_l \\V ^N X X X s
- x. x X X ""^ 40 80 120 160 Th <°C) LJOUS DC operation, uous RF operation (f > 1 MHz), me RF operation during mismatch z). g.3 Power/temperature derating. THERMAL RESISTANCE SYMBOL "lh jirb f^lh iit-h PARAMETER from junction to mounting base from mounting base to heatsink CONDITIONS PBl = 41 W; Tmb = 25°C MAX. 4.3 0.6 UNIT K/W K/W
T, = 25 °C. SYMBOL V(BR)G80 VpRiceo V<BFD6BO 'cES hre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain collector capacitance feedback capacitance collector-stud capacitance CONDITIONS open emitter; lc = 20 mA open base; lc = 40 mA open collector; IE = 2 mA VBe = 0; VCE=16V VOE = 10V; IC=1.2A VCB = 12.5V; IE-I.-O; f=1 MHz VCE= 12.5V; I0 = 0; f = 1 MHz f = 1 MHz MIN. TYP. 1.2 MAX. UNIT V V V mA PF PF PF 100 "FE C Fig.4 D x ** * ---— 7Z9S01B -Hs ^^^ 2,BVSl c-f^ I X s 2 1C (A) 4 C current gain as a function of collector current, typical values. (PF) fE = ifl = 0; Fig.5 CO MEA2I3 ±^=
- • m ) 5 10 15 20 VCB (V) f = 1 MHz. Collector capacitance as a function of lector-base voltage, typical values. (GHz) c VCB =12.5 Fig.6 />• N IE (A) Transition frequency as a function of emitter current, typical values.