BLF861A NJSEMI | Alldatasheet
Document overview
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Technical content
, iJna, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power LDMOS transistor BLF861A
FEATURES
- High power gain
- Easy power control
- Excellent ruggedness
- Designed to withstand abrupt load mismatch errors
- Source on underside eliminates DC isolators; reducing common mode inductance
- Designed for broadband operation (UHF band)
- Internal input and output matching for high gain and optimum broadband operation.
APPLICATIONS
- Communication transmitter applications in the UHF frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. PINNING - SOT540A PIN source connected to flange 3 4 Top view Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source 860 MHz test circuit. MODE OF OPERATION CW, class-AB PAL BG (TV); class-AB f (MHz) 860 860 (ch 69) VDS (V) PL (W) 150 >150 typ. 170 (peak sync) GP (dB) >13.5 typ. 14.5 >14 TlD {%) >50 >40 AGP (dB) note 1 Note 1. Sync compression: input sync > 33%; output sync 27%. NJ .Semi-Coiidudors reserves rhe right (o change test conditions, parameter limits and packuge dimensions without notice Information tumished by NJ Semi-Conductors"' believed to he hoih accurate and reliable ill the lime of going to press. However Semi-C uiiJuuors .bsumcs no responsibility lor ;my errors nr uumsiiins JiscuvcreJ in its use NJ Seim-CtutchMurs ei i. iiiti1 mop; In VL'iil\\m ih Has heels ire uirreni before plncina
In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Plot Tstg PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature CONDITIONS Tmb<25°C MIN. -65 MAX. ±15 318 +150 200 UNIT V V A W UHF power LDMOS transistor BLF861A THERMAL CHARACTERISTICS SYMBOL Rth i-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25°C;P,ot = 318W VALUE 0.55 0.2 UNIT K/W K/W CHARACTERISTICS Tj = 25 °C; per section; unless otherwise specified. SYMBOL V(BR)DSS VQSth IDSS bsx IGSS 9fs RDSon CjSS CQSS Cres PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VQS = 0; ID = 1.5mA VDS = 10V; ID = 150mA VQS = 0; VDS = 32 V VGs = VGsth + 9V;VDs = 10V VGS = +15V;VDS = 0 VDS = 10V; ID = 4 A VGS = VGS,h + 9V;lD = 4A VQS = 0; VDS = 32 V; f = 1 MHz <1> VGS = 0; VDS = 32 V; f = 1 MHz <1> VQS = 0; VDS = 32 V; f = 1 MHz <1> MIN. TYP. 160 MAX. 5.5 2.2 UNIT V V HA A nA S mO pF pF PF UHF power LDMOS transistor BLF861A
APPLICATION INFORMATION
RF performance in a common source 860 MHz test circuit. Th = 25 °C; Rth mb-h = 0.15 K/W; unless otherwise specified. MODE OF OPERATION CW; class-AB 2-tone; class-AB PAL BG (TV); class-AB f (MHz) 860 f! = 860 it = 860.1 860 (ch 69) VDS (V) IDQ (A) PL (W) 150 150 (PEP) >150 typ. 170 (peak sync) GP (dB) >13.5 typ. 14.5 >14 >14 Ho (%) >50 >40 >40 d,m (dBc) <-25 AGP (dB) note 1