BLF246 NJSEMI | Alldatasheet

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Technical content

iJ-*ioaucti, Line, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 VHP power MOS transistor BLF246

FEATURES

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch.

APPLICATIONS

  • Large signal amplifier applications in the VHP frequency range.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGs) information is provided for matched pair applications. Refer to the "General" section of the handbook for further information. PINNING-SOT121B PIN Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 108 VDS (V) PL (W) GP (dB) >16 110 (%) >55 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature CONDITIONS Tamb < 25 "C MIN. -65 MAX. ±20 130 +150 200 UNIT V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb "th mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink VALUE 1.35 0.2 UNIT K/W K/W b (A) 10-1 (1) Cur (2) Tmb — m^ s MRA931 s<2 i s Tl \\0 VrjgtV) 1°2 ent is this area may be limited by Roson = 25 "C, Fig.2 DC SOAR. (1) Continuous operation. (2) Short-time operation during mismatch Fig.3 Power derating curves.

Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS bss IGSS Vcsth AVGS 9fs RoSon IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 50 mA VGS = 0; VDS = 28 V VGs = ±20 V; VDS = 0 ID = 50mA; VDS = 10V ID = 50mA; VDS = 10V !D = 2.5Aor5A; VDS= 10V ID = 5 A; VGS = 10V VGS = 10 V; VDS = 10V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz WIN. TYP. 4.2 0.2 225 180 MAX. 2.5 4.5 100 0.3 UNIT V mA MA V mV S ii A PF PF PF GS group indicator GROUP A B C D E F G H J K L M N LIMITS (V) MIN. 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 GROUP O P Q R S T U V w X Y z LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B -! Q I* 10mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 617 0286 0243 b 582 5.56 0229 0.219 c 0.16 I 0.10 ro.ooe 0.004 D 1286 12.59 0.506 0.496 DI 12.83 12 57 0.505 0495 F 2.67 241 0.105 0.095 H 28.45 25.52 1.120 1.005 P 330 3,05 0.130 0.120 Q 445 3,91 0.175 0,154 q 18.42 0725 Ul 24.90 2463 098 097 648 6.22 0.255 0245 1232 1206 0,485 0475 025 001 OUTLINE VERSION REFERENCES SOT121B IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-29