BLF221 NJSEMI | Alldatasheet
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Technical content
J , Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 HF/VHF power MOS transistor BLF221
FEATURES
- High power gain
- Easy power control
- Gold metallization » Good thermal stability
- Withstands full load mismatch.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the HF/VHF frequency range. This transistor is encapsulated in a 3-tead, SOT5 (TO-39/3) metal envelope, with the source connected to the case. PIN CONFIGURATION Bottom vww Fig.1 Simplified outline and symbol. PINNING -TO-39/3 PIN RF performance at T^ = 25 °C in a common source test circuit. MODE OF OPERATION CW, dass-B f (MHz) 175 VM (V) 12.5 PC (W) GP (dB) >10 (%) >50 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Scmi-"- Conckictors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Con doctors assumes no responsibility for any errors or omissions discovered ir its use. NJ Semi-Conductors encourages customers to verify that datasheet are current before placing orders Quality Semi-Conductors
HF/VHF power MOS transistor BLF221 UMITJNG VALUES In accordance with the Absolute Maximum System <IEC 134), SYMBOL VDS ±VGS ID '3*9 PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature CONDmONS up to 7^ = 25 aC MIN. -65 MAX. 150 200 UNIT V V A W THERMAL RESISTANCE SYMBOL R n1h j-mb H nth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink THERMAL RESISTANCE 22K/W 3K/W HF/VHF power MOS transistor BLF221 CHARACTERISTICS Ti - 25 °C unless otherwise specified. SYMBOL j PARAMETER V(Ba>Dss I drain-source breakdown voltage 'oss 'GSS VoSflh) RoS<on) drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance Iggx on-state drain current Cto ( input capacitance cra output capacitance feedback capacitance CONDITIONS »0 = 3 mA; VQS = 0 VQS-UIV^ 12.5V ±VGS = 20V;VDS = 0 !D = 3mA;VDS=10V (0 = 0.3A;VDS = 10V lt>=0.3A;Vos=15V VQS-IBVIVM^IOV VGS=0;VDS=12.5V;f=lMHz VQS = 0; VDS = 12.5 V; f - 1 MHz VGS = 0; Vos = 12.5 V; f » 1 MHz MIN. TYP. 135 3.5 1.3 5.3 7.8 1.8 MAX. 4.5 UNIT V HA MA V mS a A pp pp PF