BLF2045 NJSEMI | Alldatasheet

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Technical content

, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 UHF power LDMOS transistor BLF2045

FEATURES

  • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA - Output power = 30 W (PEP) - Gain = 12.5 dB - Efficiency = 32% - dlm = -26dBc
  • Easy power control
  • Excellent ruggedness
  • High power gain
  • Excellent thermal stability
  • Designed for broadband operation (1800 to 2200 MHz)
  • Internally matched for ease of use.

APPLICATIONS

  • RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the 1800 to 2200 MHz frequency range
  • Broadcast drivers. PINNING - SOT467C PIN

DESCRIPTION

source, connected to flange O O Top view Fig.1 Simplified outline.

30 W LDMOS power transistor for base station

applications at frequencies from 1800 to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) fi = 2000; \\ = 2000.1 VDS (V) PL (W) 30 (PEP) GP (dB) >10 no (%) >30 dim (dBc) <-25 N.I Semi-C (inductors reserves the righl to change lest conditions, parameter limits and package dimensions without notice Information furnished by NJ Semi-Cunducton » believed to he holh accurate ami reliable A the lime or guing to press. However NI Semi-I niiJuuior* .iwumcs no responsibility Hir ;iny errors or uinivsitms discovered in its use NJ Seini-K.oinJtn.tirs encou Miitnpcrs Invents ihm ihiinshcets ;ire uirrcnr before placing .

UHF power LDMOS transistor BLF2045 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature MIN. -65 MAX. ±15 4.5 +150 200 UNIT V V A THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER thermal resistance from junction to heatsink CONDITIONS Ptot = 87.5 W; Th = 25 °C; note 1 VALUE 2.1 UNIT K/W Note 1. Thermal resistance is determined under specified RF operating conditions. UHF power LDMOS transistor BLF2045 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)DSS Vestn IDSS bsx IGSS 9fs RpSon Ciss Coss Crss PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 0.7 mA VDS = 10V; ID = 70mA VGS = 0; VDS = 26 V VGS = VGSth + 9V;VDs = 10V VGS = ±15V;VDS = 0 VDS = 10V; ID = 2.5 A VGS = VGsth + 9 V; ID = 2.5 A VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz VGS = 0; VDS = 26 V; f = 1 MHz MIN. 1.5 g TYP. 340 1.7 MAX. 3.5 125 UNIT V V A nA S m£i PF PF PF

UHF power LDMOS transistor BLF2045

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. Th = 25 °C; Rth mb-h - 0.65 K/W, unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) VDS (V) IDQ (mA) 180 PL (W) 30 (PEP) GP (dB) >10 T!D (%) >30 djm (dBc) <-25 Ruggedness in class-AB operation The BLF2045 is capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases under the following conditions: VDS = 26 V; PL = 30 W (CW); f = 2000 MHz. GP (dB) C Class-AB f! = 2000 Fig.3 MCD890 _Gp ID — — ^•__ -«=^ -^^. 10 20 30 40 5 PL (PEP) (W) operation; VDs = 26 V; IDQ = 180 mA; MHz; f2 = 2000.1 MHz. Power gain and efficiency as function peak envelope load power; typical val D 3 Of ues.

t A I I i I i i I ~i ' ! F ! t t H U2 I \\ •*• E 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inch A 4.67 3.94 0.184 0.155 b 5.59 5.33 0.220 0.210 c 0.15 0.10 0.006 0.004 D 9.25 9.04 0.364 0.356 9.27 9.02 0.365 0.355 E 5.92 5.77 0.233 0.227 5.97 5.72 0.235 0.225 F 1.65 1.40 0.065 0.055 H 18.54 17.02 0.73 0.67 P 3.43 3.18 0,135 0.125 Q 2.21 1.96 0.087 0.077 q 14.27 0.562 20.45 20.19 0.805 0.795 5.97 5.72 0.235 0.225 0.25 0.010 0.51 0.020 OUTLINE VERSION SOT467C REFERENCES IEC JEDEC EIAJ