BLF177 NJSEMI | Alldatasheet

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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 HF/VHF power MOS transistor BLF177

FEATURES

  • High power gain
  • Low intermodulation distortion
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (Vcs) information is provided for matched pair applications. Refer to the 'General' section for further information. PINNING-SOT121 PIN Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tf, = 25 °C in a common source test circuit. MODE OF OPERATION SSB class-AB CWclass-B f (MHz) 108 VDS (V) PL (W) 150 (PEP) 150 GP (dB) > 20 typ. 19 110 (%) >35 typ. 70 (dB) < -30 (dB) < -30 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

HF/VHF power MOS transistor BLF177 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS ±VGS ID Plot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature CONDITIONS up to Tmb = 25 °C MIN. ^65 MAX. 110 220 150 200 UNIT V V A W THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink THERMAL RESISTANCE max. 0.8 K/W max. 0.2 K/W 102 b (A) 10 1 (1) Curr (2) Tmb 7 — i TV ent is th = 25 °C s f \\ - J MRA906 k Lp -\\'l - s TT jj

  • -- .... .... -I- IT 10 102 103 VDS (V) area may be limited by RDS«KI}' Fig.2 DC SOAR. 300 (1) Short-time operation during mismatch. (2) Continuous operation Fig.3 Power/temperature derating curves.

HFA/HF power MOS transistor BLF177 CHARACTERISTICS Tj = 25 "C unless otherwise specified. SYMBOL V(BR)DSS bss !GSS VcS(th) AVGS 9fs RDS(on) bsx C,s Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 50 mA; VGS = 0 VGS = 0; VDS = 50 V ±VGS = 20 V; VDS = 0 ID = 50 mA; VDS = 10V ID = 50mA; VDS = 10V ID = 5 A; VDS = 10V ID = 5 A; VGs = 10V VGS = 10V; VDS = 10V VGs = 0; Vrjs = 50V;f=1 MHz VGS = 0; VDS = 50V;f=1 MHz VGs = 0; VDS = 50 V;f= 1 MHz MIN. 110 n^s TYP. 6.2 0.2 480 190 MAX. 2.5 4.5 100 0.3 UNIT V mA MA V mV S A PF PF PF T.C. (mV/K) -5 ^ 10-'

1 ID (A) 10

VDS = 10 V; valid for Th = 25 to 70 °C. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current, typical values. 10 15 VGS (V) S = iov Fig. 5 Drain current as a function of gate-source voltage, typical values.

HFA/HF power MOS transistor BLF177 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B -| qj -ur 10tnm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) F c 016 010 0.006 0.004 D 12.86 1259 0.506 0,496 <»1 12,83 12,57 0,505 0495 2,67 2.41 0105 0.095 2845 25.52 1.120 1,005 L 793 632 0.312 0249 P 330 305 0 130 0120 Q 4,45 3,91 0.175 0.154 q 184 0.72 REFERENCES JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-28