BLF175 NJSEMI | Alldatasheet

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Technical content

L/-*ioauet±, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HFA/HF power MOS transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BLF175

FEATURES

  • High power gain « Low intermodulation distortion
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch
  • Gold metallization ensures excellent reliability.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (Vcs) information is provided for matched pair applications. Refer to the handbook 'General' section for further information. PIN CONFIGURATION Fig.1 Simplified outline and symbol. PINNING -SOT123A PIN RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION class-A class-AB CW, class-B f (MHZ) 108 VDS (V) IDQ (mA) 800 150 PL (W) 8 (PEP) 30 (PEP) Gp (dB) >24 typ. 24 typ. 20 >1D (%) typ. 40<1> typ. 65 (dB) <-40 typ. -35 Note 1. 2-tone efficiency. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

HF/VHF power MOS transistor BLF175 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VDS ±VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature CONDITIONS Tmb < 25 °C MIN. -65 MAX. 125 +150 200 UNIT V V A W O/"4 THERMAL CHARACTERISTICS SYMBOL Rthj-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 °C; Ptot = 68 W Tmb = 25 °C; Ptot = 68 W VALUE 2.6 0.3 UNIT K/W K/W b (A) 10~1 (1) Cur (2) Tmb MRAS05 -2- f i f - -\\ ^ — S . J

10 VDS(V) 1°2

ent is this area may be limited by RDSOO = 25 "C. Fig.2 DC SOAR. 100 ptot (W) (1) Con (2) Sho X ~\\' j <2) X MSP063 40 80 120 T , _ 160 Th < c> inuous operation. 1-time operation during m smatch. Fig.3 Power derating curves.

HF/VHF power MOS transistor BLF175 CHARACTERISTICS Tj = 25 1JC unless otherwise specified. SYMBOL V(BR)DSS loss IGSS Vcsth AVGS 9fs RDSOR IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID= 100 mA; VGS = 0 VGS = 0; VDS = 50 V ±VGS = 20 V; VDS = 0 ID= 10mA; VDS = 10V ID= 10mA; VDS = 10V b=1 A; VDS = 10V ID=1 A; VGS = 10V VGS = 10 V; VDS = 10V VGs = 0;VDs = 50V;f=1 MHz VGs = 0; VDS = 50V;f=1 MHz VGs = 0; VDs = 50V;f=1 MHz MIN. 125 1.1 TYP. 1.6 0.75 5.5 130 3.7 MAX. 100 4.5 100 1.5 UNIT V HA uA V mV S Q A PF PF PF group indication GROUP A B C D E F G H J K L M N LIMITS (V) MIN. 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2,8 2.9 3.0 3.1 3.2 3.3 GROUP O P Q R S T U V w X Y z LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5

HFA/HF power MOS transistor BLF175 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT123A - D 5 10 mm i i i i _, i scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT inches A 7,47 6.37 ,294 .251 b 582 5.56 0.229 0,219 c 018 010 0007 0.004 D 973 9.47 0.383 0373 978 942 0385 0371 F 272 231 0107 0.091 H 20,71 1993 0815 0785 P 3.33 1 3,04 0,131 0.120 Q 4,63 4.11 0.182 0.162 q 18.42 0.725