BFY90 SEME-LAB | Alldatasheet
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The BFY90 is a low noise transistor intended for use in broad and narrow-band amplifiers up to 1GHz. ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise stated) BFY90 Prelim. 12/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. SILICON PLANAR EPITAXIAL NPN TRANSISTOR VCBO Collector – Base Voltage VCER Collector – Emitter Voltage (RBE /c163 50/c87 ) VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC(AV) Average Collector Current ICM Peak Collector Current (f/c179 1MHz) Ptot Power Dissipation at Tamb /c61 25°C Tj Storage Temperature Tstg, Junction Temperature 30V 30V 15V 2.5v 25mA 50mA 200mW°C 200°C –65 to +200°C MECHANICAL DATA Dimensions in mm (inches) 0.48 (0.019) 0.41 (0.016) dia. 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. 2.54 (0.100) Nom. TO72 Pin 1 – Emitter Pin 2 –Base Pin 3 – Collector Pin 4 – Connected to Case
Parameter Test Conditions Min. Typ. Max. Unit nA V GHz pF pF dB dB mW 0.75 25 150 20 125 1.3 1.5 0.8 3.5 BFY90 Prelim. 12/99Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. ICBO V(BR)CEO* V(BR)CER* VCEK h21E fT C 22b(1) C 12e(2) NF G p PO(2) Collector Cut Off Current Collector Emitter Breakdown Voltage Collector Emitter Breakdown Voltage Collector Emitter Knee Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Open-Circuit Reverse Transfer Capacitance Noise Figure Power Gain Output Power VCB = 15V IE = 0 IC = 10mA IB = 0 IC = 10mA R BE /c163 50/c87 IC = 10mA VCE = 1V IC = 2mA VCE = 1V IC = 25mA VCE = 5V IC = 2mA f = 500MHz V CE = 5V IC = 25mA f = 500MHz V CB = 10V IE = 0. f = 1MHz V CE = 5V IC = 0 f = 1MHz V CE = 5V IC = 2mA f = 100kHz R G optimum VCE = 5V IC = 2mA f = 200MHz R G optimum VCE = 5V IC = 2mA f = 500MHz R G = 50/c87 VCE = 5V IC = 2mA f = 800MHz R G optimum VCE = 10V IC = 14mA f = 200MHz V CE = 10V IC = 14mA f1 = 202MHz f2= 205MHz Output SWR /c163 2 TOS sortie /c163 2 dIM* = - 30dB at 2 f2 - f1 = 208MHz ELECTRICAL CHARA CTERISTICS (TA= 25°C unless otherwise stated) * Pulse test tp = 300/c109 s , /c100 /c163 2% (1) Shield Lead (case) not connected (2) Shield Lead (case) grounded * Intermodulation Distortion R th(j-a) R th(j-c) /c163 0.875 Max /c163 0.575 Max Junction-ambient thermal resistance Junction-case thermal resistance °C/W °C/W THERMAL D ATA DYNAMIC CHARACTERISTICS