BFY90 NJSEMI | Alldatasheet
Document overview
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Technical content
- Conductor , (i nc.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212) 227-6005 FAX: (201) 376-8960 BFX89 BFY90 WIDE BAND VHF/UHF AMPLIFIER , SILICON PLANAR EPITAXIAL TRANSISTORS , TO-72 METAL CASE , VERY LOW NOISE APPLICATIONS : t TELECOMMUNICATIONS , WIDE BAND UHF AMPLIFIER , RADIO COMMUNICATIONS TO-72
DESCRIPTION
The BFXS9 and BFY90 are silicon planar epitaxial NPN transistors produced using interdigitated base emitter geometry. They are particulary designed for use in wide band common-emitter linear amplifiers up to 1 GHz. They feature very high fr, low reverse capacitance, excellent cross modulation properties and very low noise performance. The BFY90 is com- plementary to the BFR99A. Typical applications in- clude telecommunication and radio communication equipment. ABSOLUTE MAXIMUM RATINGS INTERNAL SCHEMATIC DIAGRAM JSymboiJ -j^Boi _V«R_ ^£EO__ ^B0__ — i«__ — !il__ -Ins/H Parameter Collector-base Voltage (I6 = 0) Collector-emitter Voltage (RBE £ 50 Q) Collector-emitter Voltage (Is - 0) Emitter-base Voltage (Ic = 0) Collector Current Collector Peak Current (f a 1 MHz) Total Power Dissipation at T,mb z 25 °C Storage and Junction Temperature Value 2.5 200 - 65 to 200 Unit V V V V mA mA mW Quality Semi-Conductors
R(h j-case Rth i-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 580 880 °C/W °C/W ELECTRICAL CHARACTERISTICS (Tamb = 25 <C unless otherwise specified) Symbol ICBO VCEK' nF£ fr CCBO(1) Cr.<2> NF(2) Gp.<2> Po Parameter Collector Cutoff Current (le-0) Collector-emitter Knee Voltage DC Current Gain Transition Frequency Collector-base Capacitance Reverse Capacitance Noise Figure Power Gain (not neutralized) Output Power Test Conditions VCB -15V Ic - 20 mA lc -2 mA VCE -1 V for BFX89 for BFY90 lc =25 mA VCE -1 V VCE - 5 V f - 500 MHz lc -2mA for BFX89 for BFY90 lc - 25 mA for BFX89 for BFY90 IE=0 VCB -10V f - 1 MHz for BFX89 for BFY90 lc-2mA VCE -5V f - 1 MHz for BFX89 for BFY90 lc - 2 mA VCE - 5 V Rg - Optimized f - 100 kHz for BFY90 Only f - 200 MHz R, . Optimized for BFX89 for BFY90 f = 500 MHz Rg=50fl forBFX89 for BFY90 f > 800 MHz Rg = Optimized for BFX89 for BFY90 for BFX89 lc-8mA Vce-10V f - 200 MHz f = 800 MHz for BFY90 lc-14mA VCE -10V f - 200 MHz f . 800 MHz loi BFX89 lc=8mA VCE -10V dim--30dB
131 Channel 9
(4) Channel 62 for BFY90 c = 14mA VCE -10V dim =-30dB <3> Channel 9 |4) Channel 62 Mln. 1.3 Typ. 1.1 1.2 1.4 0.6 0.6 3.3 2.5 5.5 Max. 0.75 150 150 125 1.7 1.5 0.8 3.5 6.5 Unit nA V GHz GHz GHz GHz PF PF PF PF dB dB dB dB dB dB dB dB dB dB dB mW mW mW mW
- IB, value lor witch !c> 22mA at VCE - 1 V (3) Ip . 202 MHz, f, = 205 MHz, f(Jw, - 208 MHz 1 ) Shield lead not grounded W t- - ™ "Hz- '• - 0°2 MHz' '"«> - 806 MHz 2) Shield toad grounded