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Technical content
GROSS DIE PER 4 INCH WAFER 53,788 PROCESS CP317V Small Signal Transistor NPN - RF Transistor Chip Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å www.centralsemi.com R0 (30-August 2011)
Typical Electrical Characteristics www.centralsemi.com R0 (30-August 2011)