BFX89 CENTRAL | Alldatasheet
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MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage (RBE≤50Ω) V CER 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO 2.5 V Collector Current I C 25 mA Peak Collector Current (f ≥ 1 MHz) I CM 50 mA Power Dissipation P D 200 mW Power Dissipation (TC=25°C) P D 300 mW Operating and Storage Junction Temperature T J,Tstg -65 to +200 °C Thermal Resistance ΘJA 875 °C/W Thermal Resistance ΘJC 583 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) BFX89 BFY90 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS ICBO VCB=15V 10 10 nA BVCBO IC=10µA 30 30 V BVCER IC=1.0mA, RBE=50Ω 30 30 V BVCEO IC=1.0mA 15 15 V BVEBO IE=10µA 2.5 2.5 V hFE VCE=1.0V, IC=2.0mA 20 150 25 150 hFE VCE=1.0V, IC=25mA 20 125 20 125 fT VCE=5.0V, IC=25mA, f=500MHz 1.2 1.3 1.4 GHz Cob VCB=10V, IE=0, f=1.0MHz 1.7 1.5 pF BFX89 BFY90 NPN SILICON RF TRANSISTORS JEDEC TO-72 CASE Central Semiconductor Corp. TM R3 (20-March 2006) DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are Silicon NPN Epitaxial Planar Transistors mounted in a hermetically sealed package designed for VHF/UHF amplifier, oscillator, and converter applications. MARKING CODE: FULL PART NUMBER
Semiconductor Corp. TM BFX89 BFY90 NPN SILICON RF TRANSISTORS R3 (20-March 2006) JEDEC TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) EMITTER 2) BASE 3) COLLECTOR 4) CASE ELECTRICAL CHARACTERISTICS (CONTINUED): (TA=25°C unless otherwise noted) BFX89 BFY90 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS Gpe VCE=10V, IC=8mA, f=200MHz 19 22 dB Gpe VCE=10V, IC=8mA, f=800MHz 7.0 dB Gpe VCE=10V, IC=14mA, f=200MHz 21 23 dB Gpe VCE=10V, IC=14mA, f=800MHz 8.0 dB NF V CE=5.0V, IC=2.0mA, f=100kHz 4.0 dB NF V CE=5.0V, IC=2.0mA, f=500MHz, RG=50Ω 6.5 5.0 dB NF V CE=5.0V, IC=2.0mA, f=800MHz 7.0 5.5 dB Po VCE=10V, IC=8mA, f=205MHz 6.0 mW Po VCE=10V, IC=14mA, f=205MHz 10 12 mW