BFY81 TTELEC | Alldatasheet

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Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourage s customers to verify that datasheets are current before placing orders. Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8502 Issue 1 Page 1 of 3 BFY81

  • Dual Silicon Matched Planar Transistors
  • Hermetic TO-77 (MO-002AF) Metal Package.
  • Ideally Suited For Differential And Low Level Dc Amplifiers
  • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise stated) VCBO Collector – Base Voltage 45V VCEO Collector – Emitter Voltage 45V VEBO Emitter – Base Voltage 6V IC Continuous Collector Current 50mA One Side Both Sides PD Total Power Dissipation at TA = 25°C 400mW 500mW Derate Above 25°C 2.3mW/°C 2.9mW/°C PD Total Power Dissipation at TC = 25°C 800mW 1.3W Derate Above 25°C 4.6mW/°C 7.4mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters One Side Max. Both Sides Max. Un its Rθ JA Thermal Resistance, Junction To Ambient 437 350 °C/W Rθ JC Thermal Resistance, Junction To Case 219 135 °C/W

Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8502 Issue 1 Page 2 of 3 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise stated) Per Side Symbols Parameters Test Conditions Min. Typ. Max. Units V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA I E = 0 45 V(BR)CEO (1) Collector-Emitter Breakdown Voltage IC = 10mA I B = 0 45 V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA I C = 0 6 V VCB = 40V I E = 0 10 nA ICBO Collector Cut-Off Current TA = 150°C 10 µ A IEBO Emitter-Cut-Off Current VEB = 5V I C = 0 10 ICEO Collector-Cut-Off Current VCE = 5V I B = 0 10 nA VCE(sat) (1) Collector-Emitter Saturation Voltage IC = 1.0mA I B = 0.1mA 0.35 VBE(on) Base-Emitter On Voltage IC = 100 µ A VCE = 5V 0.7 V IC = 10µ A VCE = 5V 60 IC = 100 µ A VCE = 5V 100 hFE (1) Forward-current transfer ratio IC = 1.0mA V CE = 5V 150 ELECTRICAL MATCHING CHARACTERISTICS 2FEh 1FEh (2) Forward-current transfer ratio (gain ratio) IC = 100 µ A VCE = 5V 0.8 1.0 |V BE1 -VBE2 | Base-Emitter Voltage Differential IC = 100 µ A VCE = 5V 10 mV |∆(V BE1 -VBE2 )∆TA| (3) Base-Emitter Voltage Differential Change Due To Temperature IC = 100 µ A VCE = 5V 25 µ V/°C DYNAMIC CHARACTERISTICS IC = 500 µ A VCE = 5V | h fe | Small signal forward- current transfer ratio f = 30MHz VCB = 5V I E = 0 Cobo Output Capacitance f = 1.0MHz 6 pF IC = 10 µ A VCE = 5V NF (3) Noise Figure f = 1.0KHz 4 dB Notes Notes Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) The lower of the two readings is taken as h FE1 (3) By design only, not a production test

Semelab Limited Semelab Limited Semelab Limited Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4 JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 5526 12 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8502 Issue 1 Page 3 of 3 MECHANICAL DATA Dimensions in mm (inches) 1.02 (0.040) Max. 12 .7 (0.500 ) Min. 6.10 (0.240 ) 6.60 (0.260 ) 8.51 (0.335) 9.40 (0.370) 7.75 (0.305) 8.51 (0.335) 5.08 (0.200) 2.54 (0.100) 2.54 1.14 (0.045) 45˚ 0.71 (0.028) 0.86 (0.034) 0.41 (0.016) 0.53 (0.021) TO -77 (MO -002AF) Underside View Pin 1 Pin 2 Pin 3 Collector 1 Base 1 Emitter 1 Pin 4 Pin 5 Pin 6 Emitter 2 Base 2 Collector 2