BFY640 INFINEON | Alldatasheet
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Technical content
IFAG IMM RPD D HI R 1 of 3 V1, June 2010 HiRel NPN Silicon Germanium RF Transistor HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz Hermetically sealed microwave package ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Pin Configuration 1 2 3 4 Package BFY640B - C E B E Micro-X Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Ta > 0 °C Ta ≤ 0 °C VCEO 4.0 3.7 V V Collector-base voltage VCBO 13 V Emitter-base voltage VEBO 1.2 V Collector current 1) IC 50 mA Base current IB 3 mA Junction temperature Tj 175 C Operating temperature range Top -65...+175 C Storage temperature range Tstg -65...+175 C Thermal Resistance Junction-soldering point 2) Rth JS 325 K/W Notes.: 1) For TA > 25°C the derating of IC has to be considered. Nomograms will be available on request. 2) TS is measured on the emittter lead at the soldering point to the pcb. 1 2
IFAG IMM RPD D HI R 2 of 3 V1, June 2010
Electrical Characteristics
at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - 10 µA Collector-emitter cutoff current 1) VCE = 4.0 V, IB = 0.1 µA ICEX - - 200 µA Emitter-base cuttoff current VEB = 1.2 V, IC = 0 IEBO - 5 A DC current gain IC = 30 mA, VCE = 3 V hFE 135 180 250 - AC Characteristics Collector-base capacitance VCB = 2 V, VBE = vbe = 0, f = 1 MHz CCB - 0.07 - pF Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz CCE - 0.45 - pF Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz CEB - 0.6 - pF Noise Figure (ZS = Zsopt) IC = 5 mA, VCE = 3 V, f = 1.8 GHz IC = 5 mA, VCE = 3 V, f = 6.0 GHz F 0.8 1.1 dB Insertion power gain (ZS = ZL = 50 ) IC = 30 mA, VCE = 3 V, f = 1.8 GHz IC = 30 mA, VCE = 3 V, f = 6.0 GHz |S21e|2 22.5 12.5 dB Power gain (ZS = ZSopt , ZL = ZLopt) IC = 30 mA, VCE = 3 V, f = 1.8 GHz Gms dB Power gain (ZS = ZSopt , ZL = ZLopt) IC = 30 mA, VCE = 3 V, f = 6.0 GHz Gma dB Notes.: 1) This Test assures V(BR)CE0 > 4.0V G S S k kma 21 12 12( ) , G S S ms 21
IFAG IMM RPD D HI R 3 of 3 V1, June 2010 Micro-X Package Edition 2010-06 Published by Infineon Technologies AG
81726 München, Germany
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