BFY50

BFY50 SEME-LAB | Alldatasheet

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Technical content

Prelim.02/00 BFY50 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR

Description

The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications V CBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current ICM Collector Peak Current PTOT Total Power Dissipation @ Tamb /GA3/G20 25°C @ T case /GA3/G20 25°C Tstg,Tj Storage and Operatuing Junction Temperature R j-case Thermal Resistance Junction to Case R j-amb Thermal Resistance Junction to Ambient 80V 35V 1.5A 0.8W –65 to 200°C 35°C / W 218°C / W MECHANICAL DATA Dimensions in mm (inches) TO39 PACKAGE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Pin 1 = Emitter Underside View Pin 2 = Base Pin 3 = Collector 0.89 (0.035) max. 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 5.08 (0.200) typ. 45˚ 12.70 (0.500) min. 4.19 (0.165) 4.95 (0.195) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 7.75 (0.305) 8.51 (0.335) dia.

Parameter Test Conditions Min. Typ. Max. Unit Prelim.02/00 BFY50 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Parameter Test Conditions Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) IC = 100/G6D AI E = 0 IC = 30mA I B = 0 IC = 100mA I E = 100/G6D A VCB = 60V I E = 0 TC = 100°C VEB = 5V I C = 0 TC = 100°C IC = 150mA I E = 15mA IC = 1A I B = 0.1A IC = 150mA I B = 15mA IC = 1A I B = 0.1A IC = 10mA V CE = 10V IC = 150mA V CE = 10V IC = 1mA V CE = 10V V(BR)CBO* Collector – Base Breakdown Voltage V(BR)CEO* Collector – Emitter Breakdown Voltage V(BR)EBO* Emitter – Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current VCE(sat) Collector – Emitter Saturation Voltage VBE(sat) Base – Emitter Saturation Voltage hFE* DC Current Gain 2.5 2.5 0.14 0.2 0.7 1 0.95 1.3 1.5 2 20 40 30 55 15 30 V nA /G6D A nA /G6D A V V h fe Small Signal Current Gain hie Imput Impedance hrE Reverse Voltage Ratio hoe Output Admittance C cbo Collector -Base Capacitance fT Transistion Frequency td Delay Time tr Rise Time ts Storage Time tf Fall Time VCE = 6V I C = 1mA f = 1kHz VCE = 6V I C = 10mA f = 1KHz VCE = 5V I C = 10mA f = 1.KHz VCE = 5V I C = 10mA f = 1.KHz VCE = 5V I C = 10mA f = 1.KHz VCB = 5V I E = 10mA f = 1.KHz VCE = 10V I C = 50mA IC = 150mA V CC = 10V IB1= 15mA V BE = -2V IC = 150mA V CC = 10V IB1= -IB2 = 15mA 180 55 x10 60 100 300 /G57 /G6D S pF MHz ns DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Pulse Duration= 300/G6D s, Duty Cycle = 1%