BFY196 SIEMENS | Alldatasheet

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Discrete and Microwave Semiconductor ¥ For low noise, high gain amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package f T = 6.5 GHz, F = 3 dB at 2 GHz ¥ ESA Qualification pending ESD: E lectro s tatic d ischarge sensitive device, observe handling precautions! (ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1684 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request (see Chapter Order Instructions for ordering example) The maximum permissible base current for V FBE measurements is 50 mA (spot measurement duration < 1 s). T S is measured on the collector lead at the soldering point to the pcb. Type Marking Ordering Code Pin Configuration Package BFY 196 (ql) see below C E B E Micro-X1 Table 1 Maximum Ratings Parameter Symbol Limit Values Unit Collector-emitter voltage V CEO 12 V Collector-emitter voltage, V BE = 0 V CES 20 V Collector-base voltage V CBO 20 V Emitter-base voltage V EBO Collector current I C 100 mA Base current I B mA Total power dissipation, T S 104 C P tot 700 mW Junction temperature T j 200 C Operating temperature range T op 65 É 200 C Storage temperature range T stg 65 É 200 C Thermal Resistance Junction soldering point R th JS < 135 K/W

Semiconductor Group 2 Draft A03 1998-04-01

Electrical Characteristics

V (BR)CE0 > 12 V. Table 2 DC Characteristics at T A = 25 C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Collector-base cutoff current V CB = 20 V, I E = 0 I CBO 100 m A Collector-emitter cutoff current V CE = 12 V, I B = 1 m A I CEX 1000 m A Collector-base cutoff current V CB = 10 V, I E = 0 I CBO 50 nA Emitter-base cutoff current V EB = 2 V, I C = 0 I EBO m A Emitter-base cutoff current V EB = 1 V, I C = 0 I EBO 0.5 m A Base-emitter forward voltage I E = 50 mA, IC = 0 VFBE -- 1V DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 175 -

Semiconductor Group 3 Draft A03 1998-04-01 Table 3 AC Characteristics at TA = 25 °C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Transition frequency IC = 70 mA, VCE = 5 V, f = 500 MHz fT 6 6.5 - GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz CCB - 1 1.3 pF Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz CCE - 0.44 - pF Emitter-base capacitance VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz CEB - 3.6 4.3 pF Noise figure IC = 20 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt F - 3 3.5 dB Power gain IC = 70 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Gma 4) 10 11 - dB Transducer gain IC = 70 mA, VCE = 5 V, f = 2 GHz, ZS = ZL = 50 W ½S21e½2 45 - dB Output power IC = 80 mA, VCE = 5 V, f = 2 GHz, PIN = 15 dBm, ZS = ZL = 50 W Pout 18.5 19.5 - dBm Gma S21

Semiconductor Group 4 Draft A03 1998-04-01 Order Instructions Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: QÉ BFY196 (x) (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1684 BFY196 P For BFY196 in Professional Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de

Semiconductor Group 5 Draft A03 1998-04-01 Figure 1 Micro-X1 Package X Y 1.78 1.02 ±0.1 0.1 ø1.65 ±0.1 0.76 ±0.251.05 GXM05552 -0.03 +0.05 -0.24.2 0.5 ±0.1