BFY180 SIEMENS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package f T = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006 ESD: E lectro s tatic d ischarge sensitive device, observe handling precautions! (ql) Quality Level: P: Professional Quality, Ordering Code: Q97301013 H: High Rel Quality, Ordering Code: on request S: Space Quality, Ordering Code: on request ES: ESA Space Quality, Ordering Code: Q97111419 (see Chapter Order Instructions for ordering example) The maximum permissible base current for V FBE measurements is 3 mA (spot-measurement duration < 1 s). T S is measured on the collector lead at the soldering point to the pcb. Type Marking Ordering Code Pin Configuration Package BFY 180 (ql) see below C E B E Micro-X1 Table 1 Maximum Ratings Parameter Symbol Limit Values Unit Collector-emitter voltage V CEO Collector-emitter voltage, V BE = 0 V CES 15 V Collector-base voltage V CBO 15 V Emitter-base voltage V EBO Collector current I C 4m A Base current I B 0.5 mA Total power dissipation, T S 176 C P tot 30 mW Junction temperature T j 200 C Operating temperature range T op 65 É 200 C Storage temperature range T stg 65 É 200 C Thermal Resistance Junction soldering point R th JS < 805 K/W

Semiconductor Group 2 Draft A04 1998-04-01

Electrical Characteristics

V (BR)CE0 > 8 V. Table 2 DC Characteristics at T A = 25 C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Collector-base cutoff current V CB = 10 V, I E = 0 I CBO 100 m A Collector-emitter cutoff current V CE = 8 V, I B = 0.05 m A I CEX m A Collector-base cutoff current V CB = 8 V, I E = 0 I CBO 50 nA Emitter-base cutoff current V EB = 2 V, I C = 0 I EBO m A Emitter-base cutoff current V EB = 1 V, I C = 0 I EBO 0.5 m A Base-emitter forward voltage I E = 3 mA, IC = 0 VFBE -- 1V DC current gain IC = 0.25 mA, VCE = 1 V hFE 30 100 175 -

Semiconductor Group 3 Draft A04 1998-04-01 Table 3 AC Characteristics at TA = 25 °C unless otherwise specified Parameter Symbol Limit Values Unit min. typ. max. Transition frequency IC = 0.2 mA, VCE = 5 V, f = 500 MHz fT 5.5 6.5 - GHz Collector-base capacitance VCB = 5 V, VBE = vbe = 0, f = 1 MHz CCB - 0.15 0.24 pF Collector-emitter capacitance VCE = 5 V, VBE = vbe = 0, f = 1 MHz CCE - 0.34 - pF Emitter-base capacitance VEB = 0.5 V, VCB = vcb = 0, f = 1 MHz CEB - 0.25 0.4 pF Noise figure IC = 2 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt F - 2.6 3.2 dB Power gain IC = 2 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt, ZL = ZLopt Gma 4) 12 13.5 - dB Transducer gain IC = 2 mA, VCE = 5 V, f = 2 GHz, ZS = ZL = 50 W ½S21e½2 6.5 8 - dB Gma S21

Semiconductor Group 4 Draft A04 1998-04-01 Order Instructions Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: QÉ BFY180 (x) (ql) (ql): Quality Level Ordering Example: Ordering Code: Q97111419 BFY180 ES For BFY180 in ESA Space Quality Level Further Information See our WWW-Pages: Ð Discrete and RF-Semiconductors (Small Signal Semiconductors) www.siemens.de/semiconductor/products/35/35.htm Ð HiRel Discrete and Microwave Semiconductors www.siemens.de/semiconductor/products/35/353.htm Please contact also our marketing division: Tel.: ++89 6362 4480 Fax.: ++89 6362 5568 e-mail: martin.wimmers@hl.siemens.de

Semiconductor Group 5 Draft A04 1998-04-01 Figure 1 Micro-X1 Package X Y 1.78 1.02 ±0.1 0.1 ø1.65 ±0.1 0.76 ±0.251.05 GXM05552 -0.03 +0.05 -0.24.2 0.5 ±0.1