BFX87 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
^emi-Conaucko'i iPioducti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in TO-39 metal envelopes for general industrial applications. QUICK REFERENCE DATA BFX87 BFX88 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C DC current gain -lc= 10mA; -VCE- 10V Transition frequency at f = 100 MHz ~lc - 50 mA; -VCE = 10 V MECHANICAL DATA Fig.1 TO-39. -VCBO -VCEO -'CM ptot HFE fT max. max. max. max. min. tVP. min. BFX87 600 600 125 100 BFX88 600 600 125 100 V V mA mW MHz Dimensions in mm Collector connected to case t 8.S max 6.6 max Maximum lead diameter is guaranteed only for 12.7 mm. NJ Semi-Conductors reserves the right to change test condidons. parameters limits and package dimensions without notice information famished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
Limiting values in accordance with the Absolute Maximum System (IEC134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current (peak value) Emitter current Total power dissipation up to Tamt, = 25 °C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air CHARACTERISTICS Collector cut-off current -VCB = 30V;IE = 0 -VCB = 40 V; IE = 0; TJ - 100 °C -VCB ~ 30 V; IE - 0; TJ = 100 °C Emitter cut-off current -VEB-4.0V;IC"0 -VEB-3.0V;IC = 0 -VCBO -VCEO -"c -'CM 'EM ptot Tstg TJ Rthj-a -ICBO -ICBO -'CBO -'CBO -ICBO -'EBO -'EBO max. max. max. max. max. max. BFX87 BFX88 600 600 600 600 -65to + max. typ. max. typ. max. typ. max. typ. max. typ. max. typ. max. typ. max. 150 + 200 300 BFX87 1.0 500 0.5 0.03 2.0 2.0 500 1.0 100 BFX88 1.0 500 0.5 0.03 2.0 V V mA mA mA mW K/W nA nA nA nA nA nA M MA /iA M nA nA nA nA
DC current gain . .„ -lC=1.0mA;-VCE = 10V hFE typ' 1Q5 -IC = 10mA;-VCE = 10V hFE ^ ^ -IG = 150mA;-VCE = iov hFE ™pn- jo -IC = 500mA;-VCE = 10V hFE ^ Jjj Collector-emitter saturation voltage Q 15 v -IC = 150mA;-IB = 15mA -VcE(sat) max. Q'AQ v Base-emitter saturation voltage „ ^^ y -lc=30mA;-lB=1.0mA -VBE(sat) max. 0^90 V -lc = 150mA; -1B = 15mA -VBE(sat) ^ \\^ ^ Co I lector capacitance Rn F -VCB-10V;lE = le = 0;f=1.0MHZ Cc ^ ™ ^ Emitter capacitance 8 p -VEB-2.0V;lc=lc=0;f=1.0MHz Ce ° Transition frequency -lc=50mA;-VCE = 10V;f=100MHz; 'amb~25 c TT typ. 360 MHz Saturated switching times 25 n Turn-°ntime '°n max. 60 n! _ „ .. typ. 55 ns Turn-off time t0ff 'r DTT max. 150 ns h-parameters Measured at -lc = 10 mA; -VCE = 10 V; f = 1.0 kHz; Tamb = 25 °C Input impedance hje typ, 600 SI Voltage feedback ratio hre typ. 1.50x10'4 Forward current transfer ratio hfe typ. 155 Output admittance hoe typ. 104 /Jmho