BFX85 NJSEMI | Alldatasheet
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Technical content
<£e.mi-(lonaaakoi \\Piodudi, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN switching transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BFX85
FEATURES
- High current (max. 1 A)
- Low voltage (max. 60 V).
APPLICATIONS
- General purpose switching and amplification
- Industrial applications.
DESCRIPTION
NPN transistor in a TO-39 metal package. PINNING PIN collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot hFE fr toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time CONDITIONS open emitter open base Tamb<;25*C Tease 51 00 °C lc=150mA;VCE = 10V lc = 50 mA; VCE = 10 V; f = 100 MHz Icon = 150 mA; !Bon = 15 mA; la* = -15 mA MIN. TYP. 142 360 MAX. 100 800 2.86 UNIT V V A mW W MHz ns LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb $ 25 CC Tcase 5 25 3C 25°CsTcase^1000C MIN. -65 -65 MAX. 100 100 800 2.86 +150 175 +150 UNIT V V V A A mA mW W W C THERMAL CHARACTERISTICS SYMBOL P-thha Rthj-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 200 UNIT KM/ K/W Quality Semi-Conductors
TJ = 25 ' C unless otherwise specified. SYMBOL ICBO !EBO hFE VcEsat VeEsat Co fr PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency CONDITIONS IE = 0; VCB = 80 V |E = 0; VCB = 80V;Tj = 100 >C IE = 0; VCB = 100V |E = 0; VCB= 100V;Tj = 100°C lc = 0; VEB = 5 V lc = 0;VEB = 5V;Tj=100°C lc = 0; VEB = 6 V lc= 10mA; VCE = 10V lc=150mA;VCE=10V lc = 500mA;VCE=10V lc=1 A;VCE=10V IG = 1 0 mA; IB = 1 mA lc= 150 mA; IB = 15 mA lc = 500 mA; IB = 50 mA lc=1 A; IB = 100mA \\= 10 mA; IB = 1 mA lc = 150mA; IB = 15mA lc = 500 mA; IB = 50 mA lc=1 A; IB = 100mA |E = ie = 0; VCB = 10V;f=1 MHz lc = 50 mA; VCE = 10 V; f = 100 MHz MIN. Switching Times (between 10% and 90% levels) see Fig. 2 ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time Icon = 150 mA; leon = 15 mA; lBoff = -15mA TYP. 0.1 0.5 0.1 142 150 150 0.35 0.66 0.69 0.92 1.15 1.4 185 MAX. 2.5 500 2.5 500 200 350 1.6 1.2 1.3 1.5 UNIT nA HA nA HA nA MA nA mV mV V V V V V V pF MHz 360 300 ns ns ns ns ns ns