BFX48 SEME-LAB | Alldatasheet
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Technical content
Document. 2340 Issue 1 Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. VCBO Collector – Base Voltage (IE = 0) VCEO Collector – Emitter Voltage(IB = 0) VEBO Emitter – Base Voltage (IC = 0) IC Collector Current Ptot Total Power Dissipation Tamb /GA3 25°C Tcase /GA3 25°C Tj, Tstg Storage Temperature, Operating Junction Temperature -30V -30V -5V -100mA 0.36W -65 to 200°C MECHANICAL DATA Dimensions in mm (inches) PNP SILICON EPITAXIAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
It is suitable for a wide range of applications including low noise, low current high gain RF and wide band pulse amplifiers. 2.54 (0.100) Nom. 0.48 (0.019) 0.41 (0.016) dia. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210) 4.32 (0.170) 12.7 (0.500) min. TO18 PACKAGE Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
Parameter Test Conditions Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (Tj= 25°C unless otherwise stated) BFX48 Document. 2340 Issue 1 Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. VBE = 0 VCE = -20V Tamb = 125 °C IE = 0 I C = 10/G6D A IC = –10mA I B = 0 IE = –10/G6D AI C = 0 IC = –1mA I B = -0.1mA IC = –10mA I B = -1mA IC = –50mA I B = -5mA IC = –1mA I B = -0.1mA IC = –10mA I B = -1mA IC = –50mA I B = -5mA IC = –10/G6D AV CE = -1V IC = –100/G6D AV CE = -1V IC = –10mA V CE = -1V IC = –50mA V CE = -1V IC = –10mA V CE = -1V Tamb = -55°C IC = –10mA V CE = -20V f = 100MHz I C = 0 V EB = -0.5V f = 1MHz I E = 0 V CB = -10V f = 1MHz I C = -1mA V CE = -5V f = 100MHz Rg = 100 /G57 IC = -50mA I B1 = -5mA IC = -50mA IB1 = IB2 =-5mA IC = -10mA V CE = -20V f = 80MHz Collector Cut–off Current Collector – Base Breakdown Voltage Collector– Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage DC Current Gain Transistion Frequency Emitter – Base Capacitance Collector-Base Capacitance Noise Figure Turn-on time Turn-off time Feedback Time Constant -15 -15 -30 -30 -0.13 -0.1 -0.14 -0.3 -0.75 -0.77 -0.9 -1.1 40 80 70 130 90 160 20 40 \` 400 550 45 . 5 2.2 3.5 3.5 6 20 50 95 160 nA /G6D A V V V V V MHz pF dB ns ns ps ICES V(BR)CBO V(BR)CEO* V(BR)EBO VCE(sat)* VBE(sat)* hFE* fT C EBO C CBO NF ton toff rbb’C b’c THERMAL CHARACTERISTICS R /G71 th(j-case)Thermal Resistance Junction - Case 175 °C/W R /G71 th(j-amb) Thermal Resistance Junction - Ambient 486 °C/W *Pulsed: pulse duration = 300/G6D s, duty cycle = 1%