BFX38 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
<£Eml-Condu<!toi tPtoducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFX38 BFX39 BFX40 BFX41 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 MECHANICAL DATA Dimensions in mm (inches) 6.10(0.240) 6 60 (0,260) 12.70 (0.500) k 9.40 (0.371 7.76(0.306) 8,51 0.335) i t 0.89 (O.oasp1 0.41 (0.016) din. I [ r PNP SILICON EPITAXIAL TRANSISTOR
APPLICATIONS
- General Purpose Industrial Applications
DESCRIPTION
The BFX38-41 are Silicon Planar Epitaxial PNP transitors in Jedec TO39 metal case, designed for a wide variety of applications. Pin 1 = Emitter TO39 PACKAGE Pin 2 = Base Pin 3 = Collector ABSOLUTE VCBO VCEO VEBO Ic Ptot T3tg,Tj MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Collector- Base Voltage Collector - Emitter Voltage Emitter -Base Voltage Collector Current Total Power Dissipation Tarnb < 25°C Tease <25°C Storage and Junction Temperature BFX38 BFX39 -55V -55V -5V -1A 0.8W -55 to 200 BFX40 BFX41 -75V -75V
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cutoff Current V(BR)CBO Collector-Base Breakdown Voltage Collector Emitter Sustaining VCEO(SUS)* Vo|tage Emitter - Base (BR)EBO Breakdown voltage Collector- Emitter Saturation VCE(SAT)" Vo|tgge Base - Emitter Saturation VBECSAD- Voltgge hFE« DC Current Gain BFX38 VCB = - 40V IE = 0 BFX39 Tamb=125°C BFX40 VCB = - 50V ]E = ° BFX41 Tamb=125°C BFX38 |c = -10uA IE = 0 BFX39 BFX4° IC = -10MA IE = 0 BFX41 BFX38 . .. A . n lc = -10mA IB^O BFX39 BFX40 , ._ . , n lc = -10mA ln-0 BFX41 ALL !E = -10uA lc = 0 lc = -150mA IB = -15mA lc = - 500mA IB = - 50mA lc = -150mA IB = -15mA lc = - 500mA IB = - 50mA BFX38 BFX40 lc--100uA VCE = -5V lc = - 100mA VCE = -5V lc = - 500mA VCE = -5V BFX39 BFX41 lc = -100uA VCE = -5V lc = . 100mA VCE = -5V lc = - 500mA VCE = -5V IC = -1A VCE = -5V BFX38 BFX39 BFX40 BFX41 lc = . 100mA VCE^-5V Tamb = -55°C BFX38 BFX40 BFX39 BFX41 -55 -75 -55 -75 -0.2 -0.25 -0.2 -0.25 -0.12 -0.3 -0.8 -0.9 130 120 -50 -50 -50 -50 -0.15 -0.5 -0.9 -1.1 nA uA nA uA V V V V V
Parameter Test Conditions Min. Typ. Max. Unit fT Transitions Frequency CEBO Emitter - Base Capacitance CCBO Collector - Base Capacitance ton Turn-on time ts Storage Time tf Fall Time lc = -50mA VCE=-10V f=100MHz lc = 0 VEB = -0.5V f=1MHz |E = O vCB = -o.5V f=1MHz lc = - 500mA Vcc = -30V IB1 = -50mA lc = - 500mA Vcc = - 30V IB1 = IB2 = -50mA lc = - 500mA Vcc = - 30V IB1 = - IB2 = -50mA 100 150 160 120 100 350 MHz PF ns Pulsed: pulse duration = 300u.s, duty cycle = 1% THERMAL CHARACTERISTICS Rethfl-case) Thermal Resistance Junction to case ^ethG-amb) Thermal Resistance Junction to ambient 219 °C/W °C/W