BFX34 SEME-LAB | Alldatasheet
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- SILICON EPITAXIAL NPN TRANSISTOR HIGH SPEED, LOW SATURATION SWITCH CECC SCREENING OPTIONS DESCRIPTION: The BFX34 is a silicon Epitaxial Planar NPN transistor in a TO-39 case, intended for high current applications. Very low saturation voltage and high speed at high current levels make it ideal for power drivers, power amplifiers, switching power supplies and relay drive inverters. 120V 60V 0.87W –65 to +200°C 200°C MECHANICAL DATA Dimensions in mm (inches) TO39 (TO-205AD) Package ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) PIN1 – EMITTER Underside View PIN 2 – BASE PIN 3 – COLLECTOR 0.89 (0.035)max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45° 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 0.74 (0.029) 1.14 (0.045) Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5569 Issue 1 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. VCBO Collector – Base Voltage (IE = 0) VCEO Collector – Emitter Voltage (IB = 0) VEBO Emitter – Base Voltage (IC = 0) IC Continious Collector Current ICM Peak Repetitive Collector Current IB Continious Base Current Ptot Total Device Dissipation @ TA ≤ 25°C @ T C ≤ 25°C TSTG Storage Temperature Range TJ Junction Temperature
Parameter Test Conditions Min. Typ. Max. Unit µA V MHz pF µs 0.02 10 0.05 10 120 0.4 1 1.3 1.6 100 40 80 150 70 100 300 500 40 100 0.6 1.2 V CE = 60V V BE = 0 VEB = 4V I C = 0 IC = 5mA I E = 0 IC = 100mA I B = 0 IE = 1mA I C = 0 IC = 5A I B = 0.5A IC = 5A I B = 0.5A IC = 1A V CE = 2V IC = 1.5A V CE = 0.6V IC = 2A V CE = 2V IC = 0.5A V CE = 5V f = 20MHz I C = 0 V EB = 0.5V f = 1MHz V CB = 10V I E = 0 f = 1MHz V CC = 20V I C = 0.5A IB1 = – IB2= 0.5A BFX34 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) ICES Collector Cut-off Current IEBO Emitter Cut-off Current V(BR)CBO* Collector – Base Breakdown Voltage VCEO(sus)* Collector – Emitter Sustaining Voltage VEBO* Emitter– Base Voltage VCE(sat)* Collector – Emitter Saturation Voltage VBE(sat)* Base – Emitter Saturation Voltage hFE* DC Current Gain fT* Transition Frequency C EBO Emitter – Base Capacitance C CBO Collector – Base Capacitance ton Turn on Time toff Turn off Time * Pulse Duration= 300µs,duty cycle ≤ 2%. THERMAL CHARACTERISTICS R θJC Thermal Resistance Junction – Case 35 °C/W R θJA Thermal Resistance Junction – Ambient 200 °C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5569 Issue 1 Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.