BFX34 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
/£Ti£u ^^mi-Conductor *-s tj i, Dnc. 20 STERN AVE. D .-v o A TELEPHONE: (973) 376-2922 SPRINGFIELD, NEW JERSEY 07081 & T AO*f (212) 227-6005 U.S.A. NPN HIGH CURRENT GENERAL PURPOSE POWER FAX: (973) 376-8960 DIFFUSED SILICON PLANAR" EPITAXIAL TRANSISTOR . . . 60 V (MINI ABSOLUTE MAXIMUM RATINGS (Note 1) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation (Notes 2 & 3) Total Dissipation at 25°C Case Temperature at 25° C Ambient Temperature Maximum Voltages VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage (Note 4) \\/EBO Emitter to Base Voltage -55" C to f200"C 200" C 5.0 W 0.87 W 120 V 60 V 6.0 V See TO5-1 Package Outline ELECTRICAL CHARACTERISTICS (25°C Case Temperature unless otherwise noted) SYMBOL "FE vBE(sat) vCE(sot) >CES lEBO BVCBO BVEBO vCEO(sus) iMc cob CTE *on 'off CHARACTERISTIC DC Pulse Current Gain (Note 5) Base Saturation Voltage (Note 5) Collector Saturation Voltage (Note 5) Collector Reverse Current Emitter Cutoff Current Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Sustaining Voltage (Notes 4 & 5) High Frequency Current Gain Output Capacitance Emitter Transition Capacitance Turn On Time Turn Off Time MIN. 120 6,0 GO 3.5 TYP. 100 1.3 0.4 0.02 0.05 5.0 300 0.25 0.6 MAX. 150 1.6 1.0 100 400 0.6 1.2 UNITS V V MA HA V V V PF pF MS MS TEST CONDITIONS IC = LO A, VCE = 2.0 V IC = 1.5 A, VCE "0.6 V ~ 1C = 2.0 A. VCE = 2.0 V IC - 5.0 V, IQ =0.5 A lc = 5.0 A. IB = 0.5 A VCE = 60 V.VBE = O IC = °. VE8 = 4-° v IC = 5.0 mA, IE = 0 IE - 1.0 mA, >c = o lc= 100mA, IB = 0 IC = 0.5 A, VCE = 5.0 V. f = 20 MHz IE = °. VCB "lov IC = 0, VEB = 0.5 V lc - 5.0 A, I01 " 5.0 A IC = 5.0 A, IB1 = 1 Q2-0.5 A Quality Semi-Conductors