BFX30 NJSEMI | Alldatasheet
Document overview
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Technical content
<£e.mi-C.on.d\\ju}ko\\ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 BFX30
FEATURES
- High current (max.600 mA)
- Low voltage (max. 65 V).
APPLICATIONS
- Switching applications.
DESCRIPTION
PNP transistor in a TO-39 metal package. PINNING PIN collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Plot hFE fl toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time CONDITIONS open emitter open base Tamb<25"C lc = -10 mA; VCE = -400 mV lc = -so mA; VCE = -10 V; f = 100 MHz Icon = -150 mA; I BOP =-15 mA; lBoff = 10 mA MIN. 100 TYP. MAX. -65 -65 -600 600 200 300 UNIT V V mA mW MHz ns LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO lc ICM IBM Plot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector Tamb < 25 "C MIN. -65 -65 MAX. -65 -65 -600 -600 -200 600 +150 200 +150 UNIT V V V mA mA mA mW C JC C THERMAL CHARACTERISTICS SYMBOL Rfh j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air VALUE 300 UNIT K/W Quality Semi-Conductors
Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VcEsat VBEsat Co Ce fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency CONDITIONS IE = 0;VCB = -65V |E = 0;VCB = -50V |E = 0;VCB = -50V;Tj=100°C IC = 0;VEB=-5V IC = 0;VEB=-3V lc = -1 mA; VCE = -400 mV lc = -10 mA; VCE = -400 mV lc = -50 mA; VCE = -400 mV lc = -150 mA; VCE - -400 mV lc = -150mA; lB = -15u.A lc = -30 mA; IB = -1 mA lc = -150mA; !B = -15mA lE = ie = 0; VcB = -10V;f=1 MHz lc = ic = 0; VEB = -2 V; f = 1 MHz lc = -50 mA; VCE = -10 V; f = 100 MHz MIN. 100 TYP. MAX. -500 -50 -500 -100 200 -400 -900 -1.3 UNIT nA nA HA nA nA mV mV V pF pF MHz Switching Times (between 10% and 90% levels); see Fig.2 ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time Icon = -150 mA; !Bon = -15 mA; lBoff = 15 mA 300 250 ns ns ns ns ns ns - seating plane 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A 6.60 ' 6,35 a 5.08 b 048 041 939 9,08 Di 833 818 j 085 0,75 k 0,95 0.75 L 14.2 127 W a j i i 0.2 4511 ,' i