BFX29_03 SEME-LAB | Alldatasheet
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Technical content
Dimensions in mm (inches) Document Number 3083 Issue 2 Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current Continuous ICM Collector Current Peak IEM Emitter Current Peak Ptot Total Power Dissipation Tamb < 25°C Tstg Storage Temperature Tj Operating Junction Temperature 60V 60V 600mA 600mA 600mA 600 mW –65 to 200°C 200°C PNP SILICON EPITAXIAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
General Purpose Industrial Applications 0.89 (0.035)max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45° 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 0.74 (0.029) 1.14 (0.045) TO39 PACKAGE Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter Test Conditions Min. Typ. Max. Unit ELECTRICAL CHARACTERISTICS (Tj= 25°C unless otherwise stated) BFX29 Document Number 3083 Issue 2 Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. VEB = 5.0V I C = 0 VEB = 3V I C = 0 VCB =60V I E = 0 VCB =50V I E = 0 Tj = 100°C VCE =10V I C = 0.1mA VCE = 10V I C = 1mA VCE = 10V I C = 10mA VCE =10V I C = 50mA VCE = 10V I C = 150mA IC = 150mA I B = 15mA IC = 30mA I B = 1.0mA IC = 150mA I B = 15mA VCB = 10V I E = Ie =0 f=1.0MHz VEB = 2.0V I C = Ic =0 f=1.0MHz VCE = 10V I C = 50mA f=100MH z Tamb = 25°C Emitter Cut–off Current Collector Cut–off Current DC Current Gain Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Collector Capactitance Emitter Capactitance Transistion Frequency 30 500 1.0 100 1.0 500 0.5 50 0.03 2.0 20 90 40 105 50 125 50 125 40 90 0.15 0.40 0.77 0.90 1.05 1.30 61 2 18 30 100 360 nA nA µA V V pF MHz IEBO ICBO hFE VCE(sat) VBE(sat) C tc C te fT THERMAL CHARACTERISTICS R θth(j-amb) Thermal Resistance Junction to Ambient 292 °C/W