BFX29 NJSEMI | Alldatasheet
Document overview
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Technical content
<££ml-Condu.eioi ZPioduati, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BFX29 TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON EPITAXIAL TRANSISTOR
APPLICATIONS
- General Purpose Industrial Applications 2.54 (0 100, 0.5E"<o~H5f) TO39 PACKAGE Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO 'CM 'EM Ptot Tstg TJ Collector- Base Voltage Collector- Emitter Voltage Emitter - Base Voltage Collector Current Continuous Collector Current Peak Emitter Current Peak Total Power Dissipation Tamb < 25°C Storage Temperature Operating Junction Temperature 60V 60V 600mA 600mA 600mA 600 mW -65 to 200°C 200°C NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information ftimished by NJ Semi-Conducton is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ .Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (T, = 25°C unless otherwise stated) BFX29 Parameter Test Conditions Min. Typ. Max. Unit IEBO Emitter Cut-off Current ICBO Collector Cut-off Current FE DC Current Gain Collector - Emitter CE(sat) saturation Voltage VeE(sat) Base - Emitter Saturation Voltage Ctc Collector Capactitance Cte Emitter Capactitance fT Transistion Frequency VEB = 5.0V VEB = 3V VCB =60V VCB =50V VCE=10V VCE = 10V VCE = 10V VCE=10V lc=0 lc = 0 IE = O IE = 0 Tj=100°C lc = 0.1mA lc= 1mA lc= 10mA lc = 50mA VCE = 10V lc= 150mA lc = 150mA lc = 30mA lc = 150mA VCB = 10V VEB = 2.0V VCE = 10V f= 100MHz IB= 15mA IB= 1.0mA IB= 15mA lE = le=0 f=1.0MHz lc=ic=0 f=1.0MHz lc = 50mA Tamb=25°C 1.0 1.0 0.5 100 0.03 105 125 125 0.15 0.77 1.05 360 500 100 500 2.0 0.40 0.90 1.30 nA nA uA V V PF MHz THERMAL CHARACTERISTICS I Reth(i-amb) Thermal Resistance Junction to Ambient 292