BFW93

BFW93 SIEMENS | Alldatasheet

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wt - = ee ~ @5C D M@ 4235605 0004734 2 MMSIEG' NPN Silicon RF Broadband Transistor BFW 93 SIEMENS AKTIENGESELLSCHAF *_. O-7-3/-(5 BFW93is an epitaxial NPN silicon planar RF transistor in a plastic package of low capacitance, . similar to TO 119 (50 B 3 DIN 41867). The transistor is particularly suitable for use | 2s RF amplifiers up to the GHz range. 3 asa . H 48.0, Type Ordering code 3 ¢

5 Tyee __Cidering code 3 |A

2] BFW 93 062702-F365 fb yet 3 55.) SIGL i805 asxa2 s5-UP 1 . Approx. weight 0.3 g Dimensions in mm Maximum ratings Collector-base voltage Veso 18 Vv Collector-emitter voltage Veo 10 v Emitter-base voltage Vaco 2.5 v Collector current Ig 50 mA Collector peak current (f > 1 MHz) Tem 100 mA Junction temperature Tj 150 °c Storage temperature range Teta -86 to+126 | °C Total power dissipation (Tamp $ 70°C) Prot 200 mw Thermal resistance Junction to ambient air Risa | $400 | ww (mounted on glass fiber epoxy resin * PCB 40 mm x 25 mm x 1 mm) 780 om 2uu 0-06

25C D MM@ 8235605 0004735 4 MESIEG 25C 04735 OSL ES BFW 93 Static characteristics (Tym = 25°C) Collector cutoff current (Vogo = 10 V) Tepo S50 nA DC current gain Uc = 25 mA; Vee = 5 V) bee 226 - Uc = 50 mA; Voce = 5 V) tee 225 - Dynamic characteristics (Tam = 25°C) Transition frequency Uc = 50 mA; Vee = 5 V; f = 200 MHz) tr . 1.6 GHz . Reverse transfer capacitance . (Ue = 2 mA; Vcg = 5 V; f = 1 MHz) Ci2e 0.6 pF . Collector-base capacitance (Vcao = 5 V; f = 1 MHz) Cceo 15 pF Power gain (Ic = 30 mA; Vee = 5 V; f = 200 MHz; Rg = 602) Goo 23 dB (Ic = 30 mA; Veg = 5 V; f = 800 MHz; Rg =60Q) Goo 11 dB Noise figure (Ic = 2 MA; Veg = 5 V; f = 500 MHz); Rg = 60 Q) NF <5 dB Output voitage"” Vo 350 mv Uc = 30 mA; Vee = 5 V; dim = 60 dB; Ry = Ru= 75 9) S parameter: Operating point: Ic = 30 mA, Vog = 5 V, Zp = 50Q f Sy e Say 9 Si2 9 S22 ? Gmax (GHz) (dB) 0,1 0,346 |-134 | 17,385 | 115 0,015 |60 0,680 {-20 | 28,1 0,2 0,372 | -158 9,649 | 97 0,024 | 68 0,596 )-17 | 22,2 0,3 0,384 | -168 6,519 | 88 0,034 | 69 0555 |-15 | 18,6 . 04 0,396 |-175 5,001 | 83 0,044 |72 0,528 |-17 | 16,1 0,5 0422 |-179 3,978 | 79 0,053 |73 0,540 |-22 |14,3 0,6 0,431 177 3,322 | 73 0,062 |73 0556 |-23 | 12,9 0,7 |0,445 | 173 | 2888] 70 |o072 |74 |0,527 |-26 |116 08 0,447 169 2,534 | 66 0,081 | 75 0,547 |-31 | 10,6 0,9 0,466 166 2,222 | 63 0,088 |76 0,537 | -33 9,5 1,0 0,468 163 1,981 | 59 0,098 |75 0,542 | -37 8,5 11 0,484 160 1,818 | 55 0,107 |75 0,532 |-40 78 1,2 0,491 156 1,681 | 52 0117 | 75 0,534 |-44 72 1,3 0,515 154 1,560 | 50 0,128 |76 0,533 |-48 66 1.4 0,621 162 1,443 | 47 0,138 |77 0,631 |-53 6,0 1.5 0,541 161 1,333 | 45 0,147 178 0,544 |-54 5,5 1,6 0,534 149 1,260 | 41 0,157 |77 0,538 |-57 5,0 1,7 |0560 | 146 | 1,192] 39 |0,170 [76 |0526 |-64 | 46 18 0,559 145 1,120} 36 0,181 | 76 0,546 | -67 41 1,9 0,580 143 1,068 | 34 0,192 |75 0,518 |-71 3.6 2,0 10,583 142 1,013 1 32 0,206 174 0,537 1-76 34 1) Threa tone modulation f approx. 800 MHz 2112 0-07 fee 781

25C D MM 8235605 O00473b b&b MBSIEG 25C 04736. OT -FILIS BFW 33 SIEMENS AKTIENGESELLSCHAF . Total porm. power dissipation woneementre MW Prot =F (Tart) TTT fe, ECE COO er f LET mo LEE COON : LOCALE CEE TT Naw TTT COOP wo ELLEN CEPT TTT COCCCCCNE COCCI COOP LLL TTT Tr . 0 0 100 150 °C . — Tan 782 woe 2113 0-08 .